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FJL4315 Dataheets PDF



Part Number FJL4315
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description NPN Epitaxial Silicon Transistor
Datasheet FJL4315 DatasheetFJL4315 Datasheet (PDF)

2SC5200/FJL4315 NPN Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • High Current Capability: IC = 17A. • High Power Dissipation : 150watts. • High Frequency : 30MHz. • High Voltage : VCEO=250V • Wide S.O.A for reliable operation. • Excellent Gain Linearity for low THD. • Complement to 2SA1943/FJL4215. • Thermal and electrical Spice models are available. • Same transistor is also available in: -- TO3P package, 2SC5242/F.

  FJL4315   FJL4315



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2SC5200/FJL4315 NPN Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • High Current Capability: IC = 17A. • High Power Dissipation : 150watts. • High Frequency : 30MHz. • High Voltage : VCEO=250V • Wide S.O.A for reliable operation. • Excellent Gain Linearity for low THD. • Complement to 2SA1943/FJL4215. • Thermal and electrical Spice models are available. • Same transistor is also available in: -- TO3P package, 2SC5242/FJA4313 : 130 watts -- TO220 package, FJP5200 : 80 watts -- TO220F package, FJPF5200 : 50 watts Absolute Maximum Ratings* Ta = 25°C unless otherwise noted Symbol Parameter BVCBO BVCEO BVEBO IC IB PD Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Base Current Total Device Dissipation(TC=25°C) Derate above 25°C TJ, TSTG Junction and Storage Temperature * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics* Ta=25°C unless otherwise noted Symbol Parameter RθJC Thermal Resistance, Junction to Case * Device mounted on minimum pad size hFE Classification Classification hFE1 R 55 ~ 110 © 2009 Fairchild Semiconductor Corporation 2SC5200/FJL4315 Rev. C 1 January 2009 1 TO-264 1.Base 2.Collector 3.Emitter Ratings 250 250 5 17 1.5 150 1.04 - 50 ~ +150 Units V V V A A W W/°C °C Max. 0.83 Units °C/W O 80 ~ 160 www.fairchildsemi.com 2SC5200/FJL4315 — NPN Epitaxial Silicon Transistor 2SC5200/FJL4315 — NPN Epitaxial Silicon Transistor Electrical Characteristics* Ta=25°C unless otherwise noted Symbol Parameter Test Condition BVCBO Collector-Base Breakdown Voltage BVCEO Collector-Emitter Breakdown Voltage BVEBO Emitter-Base Breakdown Voltage ICBO Collector Cut-off Current IEBO Emitter Cut-off Current hFE1 DC Current Gain hFE2 DC Current Gain VCE(sat) Collector-Emitter Saturation Voltage VBE(on) Base-Emitter On Voltage fT Current Gain Bandwidth Product Cob Output Capacitance * Pulse Test: Pulse Width=20µs, Duty Cycle≤2% IC=5mA, IE=0 IC=10mA, RBE=∞ IE=5mA, IC=0 VCB=230V, IE=0 VEB=5V, IC=0 VCE=5V, IC=1A VCE=5V, IC=7A IC=8A, IB=0.8A VCE=5V, IC=7A VCE=5V, IC=1A VCB=10V, f=1MHz Min. 250 250 5 55 35 Typ. 60 0.4 1.0 30 200 Max. 5.0 5.0 160 3.0 1.5 Units V V V µA µA V V MHz pF Ordering Information Part Number 2SC5200RTU 2SC5200OTU FJL4315RTU FJL4315OTU Marking C5200R C5200O J4315R J4315O Package TO-264 TO-264 TO-264 TO-264 Packing Method TUBE TUBE TUBE TUBE Remarks hFE1 R grade hFE1 O grade hFE1 R grade hFE1 O grade © 2009 Fairchild Semiconductor Corporation 2SC5200/FJL4315 Rev. C 2 www.fairchildsemi.com 2SC5200/FJL4315 — NPN Epitaxial Silicon Transistor Typical Characteristics IC[A], COLLECTOR CURRENT hFE, DC CURRENT GAIN 16 IB=200mA IB = 180mA 14 IB = 160mA IB = 140mA 12 IB = 120mA 10 IB = 100mA IB = 80mA 8 IB = 60mA 6 IB = 40mA 4 2 IB = 0 0 0 2 4 6 8 10 12 14 16 18 20 VCE[V], COLLECTOR-EMI.


2SC5200 FJL4315 KS58555B


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