Document
2SC5200/FJL4315
NPN Epitaxial Silicon Transistor
Applications
• High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier
Features
• High Current Capability: IC = 17A. • High Power Dissipation : 150watts. • High Frequency : 30MHz. • High Voltage : VCEO=250V • Wide S.O.A for reliable operation. • Excellent Gain Linearity for low THD. • Complement to 2SA1943/FJL4215. • Thermal and electrical Spice models are available. • Same transistor is also available in:
-- TO3P package, 2SC5242/FJA4313 : 130 watts -- TO220 package, FJP5200 : 80 watts -- TO220F package, FJPF5200 : 50 watts
Absolute Maximum Ratings* Ta = 25°C unless otherwise noted
Symbol
Parameter
BVCBO BVCEO BVEBO IC IB PD
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Base Current Total Device Dissipation(TC=25°C) Derate above 25°C
TJ, TSTG
Junction and Storage Temperature
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics* Ta=25°C unless otherwise noted
Symbol
Parameter
RθJC
Thermal Resistance, Junction to Case
* Device mounted on minimum pad size
hFE Classification
Classification
hFE1
R
55 ~ 110
© 2009 Fairchild Semiconductor Corporation 2SC5200/FJL4315 Rev. C
1
January 2009
1 TO-264 1.Base 2.Collector 3.Emitter
Ratings
250 250
5 17 1.5 150 1.04 - 50 ~ +150
Units
V V V A A W W/°C °C
Max.
0.83
Units
°C/W
O
80 ~ 160
www.fairchildsemi.com
2SC5200/FJL4315 — NPN Epitaxial Silicon Transistor
2SC5200/FJL4315 — NPN Epitaxial Silicon Transistor
Electrical Characteristics* Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO
Collector-Base Breakdown Voltage
BVCEO
Collector-Emitter Breakdown Voltage
BVEBO
Emitter-Base Breakdown Voltage
ICBO
Collector Cut-off Current
IEBO
Emitter Cut-off Current
hFE1
DC Current Gain
hFE2
DC Current Gain
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(on)
Base-Emitter On Voltage
fT Current Gain Bandwidth Product
Cob Output Capacitance
* Pulse Test: Pulse Width=20µs, Duty Cycle≤2%
IC=5mA, IE=0 IC=10mA, RBE=∞ IE=5mA, IC=0 VCB=230V, IE=0 VEB=5V, IC=0 VCE=5V, IC=1A VCE=5V, IC=7A IC=8A, IB=0.8A VCE=5V, IC=7A VCE=5V, IC=1A VCB=10V, f=1MHz
Min.
250 250
5
55 35
Typ.
60 0.4 1.0 30 200
Max.
5.0 5.0 160 3.0 1.5
Units
V V V µA µA
V V MHz pF
Ordering Information
Part Number
2SC5200RTU 2SC5200OTU FJL4315RTU FJL4315OTU
Marking
C5200R C5200O J4315R J4315O
Package
TO-264 TO-264 TO-264 TO-264
Packing Method
TUBE TUBE TUBE TUBE
Remarks
hFE1 R grade hFE1 O grade hFE1 R grade hFE1 O grade
© 2009 Fairchild Semiconductor Corporation 2SC5200/FJL4315 Rev. C
2
www.fairchildsemi.com
2SC5200/FJL4315 — NPN Epitaxial Silicon Transistor
Typical Characteristics
IC[A], COLLECTOR CURRENT
hFE, DC CURRENT GAIN
16 IB=200mA
IB = 180mA 14 IB = 160mA
IB = 140mA 12 IB = 120mA 10 IB = 100mA
IB = 80mA
8
IB = 60mA
6
IB = 40mA
4
2
IB = 0
0 0 2 4 6 8 10 12 14 16 18 20
VCE[V], COLLECTOR-EMI.