SSH9N80A

Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology www.DataSheet4U.com SSH9N80A BVDSS = 800 V RDS(on) = 1.3 Ω ID = 9 A TO-3P Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 800V Low RDS(ON) : 1.000 Ω (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8“ from case for 5-seconds Ο Ο Ο Value 800 9 5.7 1 O Units V A A V mJ A mJ V/ns W W/ C Ο 36 ± 30 432 9 24 2.0 240 1.92 - 55 to +150 Ο O 1 O 1 O 3 O 2 C 300 Thermal Resistance Symbol R θJC R R θCS θJA Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient Typ. -0.24 -- Max. 0.52 -40 Units Ο C/W Rev. B ©1999 Fairchild Semiconductor Corporation SSF9N80A Ο N-CHANNEL POWER MOSFET Electrical Characteristics (TC=25 C unless otherwise specified) Symbol BVDSS ∆BV/∆TJ VGS(th) www.DataSheet4U.com Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Sou...