IXGT24N60CD1

HiPerFASTTM IGBT with Diode Lightspeed Series Preliminary data IXGH 24N60CD1 VCES = 600 V = 48 A IXGT 24N60CD1 IC25 VCE(sat) = 2.5 V www.DataSheet4U.com Symbol VCES VCGR Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 22 W Clamped inductive load, L = 100 mH TC = 25°C Maximum Ratings 600 600 ±20 ±30 48 24 80 ICM = 48 @ 0.8 VCES 150 -55 ... +150 150 -55 ... +150 300 V V V V A A A A TO-268 (IXGT) G E C (TAB) VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg TO-247 AD (IXGH) C (TAB) G C E C = Collector, TAB = Collector W °C °C °C °C G = Gate, E = Emitter, Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque (M3) TO-247 TO-268 1.13/10 Nm/lb.in. 6 4 g g Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 2.5 TJ = 25°C TJ = 150°C 5.5 200 3 ±100 2.1 2.5 V V mA mA nA V Features International standard packages JEDEC TO-247 and surface mountable TO-268 High frequency IGBT High current handling capability Latest generation HDMOSTM process MOS Gate turn-on - drive simplicity Fast recovery expitaxial Diode (FRED) - soft recovery with low IRM Applications PFC circuits Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies AC motor speed control DC servo and robot drives DC choppers Advantages High power density ...