CHA7012
X-band HBT High Power Amplifier
GaAs Monolithic Microwave IC Description
The CHA7012 chip is a monolithic twosta...
CHA7012
X-band HBT High Power Amplifier
GaAs Monolithic Microwave IC Description
The CHA7012 chip is a monolithic twostage GaAs high power amplifier designed www.DataSheet4U.com for X band applications. This device is manufactured using a GaInP HBT process, including, via holes through the substrate and air bridge. A nitride layer protects the
transistors and the passive components. Special heat removal techniques are implemented to guarantee high reliability. To simplify the assembly process: -the backside of the chip is both RF and DC grounded -bond pads and back side are gold plated for compatibility with eutectic die attach method and thermosonic or thermocompression bonding process.
Pout & PAE@3dBc , Linear Gain
TI Vc
TO
Vctrl
Biasing Circuit
Vc Vc
TTL Circuit
IN
OUT
TTL Circuit
Biasing Circuit
TI Vc
TO
Vctrl Vc
Vc
44
PAE @ 3dBc (%)
40 36 32 28
Main Features
Frequency band : 9.2 -10.4GHz Output power (P3dB ): 38.5dBm High linear gain: > 20dB High PAE: > 38% Two biasing modes: -VDigital control thanks to TTL interface -VAnalog control thanks to biasing circuit Chip size: 5.00 x 3.68 x 0.1mm
Pout (dBm
@
3dBc
Linear Gain (Pin=0dBm)
24 20 1 6 9 9.2 9.4 9.6 9.8 1 0 1 0.2 1 0.4 1 0.6
Main Characteristics
Pout & PAE @3dBc and Linear Gain (Temperature 25°C)
Frequency ( G H z)
Vc=7.5V, Ic (Quiescent) = 1.9A, Pulse width=100µs, Duty cycle = 20% Symbol Parameter Min Typ Fop Psat P_3dBc G
Top
Max 10.4
Unit GHz W W dB ° C
Operating frequency range Saturated...