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MMBZ27VDA-V Dataheets PDF



Part Number MMBZ27VDA-V
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description Small Signal Zener Diodes
Datasheet MMBZ27VDA-V DatasheetMMBZ27VDA-V Datasheet (PDF)

MMBZ27VDA-V Vishay Semiconductors Small Signal Zener Diodes, Dual Features • Dual Silicon Planar Zener Diodes with Common Anode configurations e3 • Dual package provides for Bidirectional or separate unidirectional configurations • The dual configurations protect two separate lines www.DataSheet4U.comwith only one device • Peak Power: 40 W at 1 ms (Bidirectional) • For bidirectional operation, circuit connected to pins 1 and 2. For unidirectional operation, circuit connected to pins 1 and 3 or.

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MMBZ27VDA-V Vishay Semiconductors Small Signal Zener Diodes, Dual Features • Dual Silicon Planar Zener Diodes with Common Anode configurations e3 • Dual package provides for Bidirectional or separate unidirectional configurations • The dual configurations protect two separate lines www.DataSheet4U.comwith only one device • Peak Power: 40 W at 1 ms (Bidirectional) • For bidirectional operation, circuit connected to pins 1 and 2. For unidirectional operation, circuit connected to pins 1 and 3 or pins 2 and 3 • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC MMBZ27VDA 3 1 20048 2 Common Anode Marking: MMBZ27VDA-V = TA7 Mechanical Data Case: SOT-23 Plastic case Weight: approx. 8.8 mg Terminals: Solderable per MIL-STD-750, method 2026 Packaging Codes/Options: GS18/ 10 k per 13 " reel (8 mm tape), 10 k/box GS08/ 3 k per 7 " reel (8 mm tape), 15 k/box Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Peak power dissipation1) Power dissipation on FR-5 Board2) Power dissipation on Alumina Substrate3) 1) 2) 3) Test condition Tamb = 25 °C Derate above 25 °C Tamb = 25 °C Derate above 25 °C Symbol PPK Ptot Ptot Value 40 225 1.8 300 2.4 Unit W mW mW/°C mW mW/°C Nonrepetitive current pulse per Figure 2 and derate above Tamb = 25 °C per Figure 3. FR-5 = 1.0 x 0.75 x 0.62 in. Alumina = 0.4 x 0.3 x 0.024 in., 99.5 % alumina. Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Thermal resistance junction to ambiant air Operating and storage temperature range Test condition Symbol RthJA Tj, Tstg Value 556 - 55 to + 150 Unit °C/W °C Document Number 81294 Rev. 1.0, 08-Mar-06 www.vishay.com 1 MMBZ27VDA-V Vishay Semiconductors Electrical Characteristics Partnumber Breakdown Voltage1) Test Current Working Peak Reverse Voltage VRWM V 22.0 Max. Reverse Leakage Current IR nA 80 Max. Reverse Surge Current IPP A 1.0 Max. Reverse Voltage (Clamping Voltage) VC at IRSM2) V 38.0 Max. Temperature Coefficient at VBR mV/°C 30 Max. Forward Voltage VBR at IT V min MMBZ27VDA-V Note: www.DataSheet4U.com 1) 2) IT mA VF V 1.1 at IF mA 200 max 28.35 1.0 25.65 VBR measured at pulse test current IT at an ambient temperature of 25 °C Surge current waveform per Figure 2 and derate per Figure 3 Typical Characteristics Tamb = 25 °C, unless otherwise specified 300 P tot , POWER DISSIPATION (mW) 250 ALUMINA SUBSTRATE 200 150 FR-5 BOARD 100 50 0 18655 100 Peak pulse derating in % of peak power or current at TA = 25 Z (°C) 75 50 25 0 0 25 100 75 50 T, Temperature (°C) 125 150 175 18657 0 25 75 100 125 50 150 TA - Ambient Temperature (°C) 175 200 Figure 1. Steady State Power Derating Curve Figure 3. Pulse Derating Curve tr Peak Value - IRSM Half Value 50 tp 0 18656 Pulse width (tp) is defined as that point where the peak current decays to 50 % of IRSM tr ≤ 10 µs IRSM 2 100 Value (%) 0 1 3 2 t, Time (ms) 4 Figure 2. Pulse Waveform www.vishay.com 2 Document Number 81294 Rev. 1.0, 08-Mar-06 MMBZ27VDA-V Vishay Semiconductors Package Dimensions in mm (Inches) www.DataSheet4U.com 17418 Document Number 81294 Rev. 1.0, 08-Mar-06 www.vishay.com 3 MMBZ27VDA-V Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an www.DataSheet4U.com earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Sem.


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