SI1071X

P-Channel 30 V (D-S) MOSFET Si1071X Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () 0.167 at VGS = - 10 V - 30 0.188 at VGS = - 4.5 V 0.244 at VGS = - 2.5 V ID (A) 0.96 0.90 0.79 SC-89 (6-LEADS) D1 6D D2 5D G3 4S Qg (Typ.) 3.25 FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switch for Portable Devices Marking Code YY Z XX Lot Traceability and Date Code Part # Code S G Top View Ordering Information: Si1071X-T1-GE3 (Lead (Pb)-free and Halogen-free) D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 °C) TA = 25 °C TA = 70 °C ID Pulsed Drain Current IDM Continuous Source-Drain Diode Current TA = 25 °C IS Maximum Power Dissipationa TA = 25 °C TA = 70 °C PD Operating Junction and Storage Temperature Range TJ, Tstg Limit - 30 ± 12 - 0.96b, c - 0.76b, c -8 - 0.2b, c 0.236b, c 0.151b, c - 55 to 150 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta, b t 5 s Steady State Notes: a. Maximum under steady state conditions is 650 °C/W. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. Symbol RthJA Typical 440 540 Maximum 530 650 Unit °C/W Document Number: 74321 S10-2542-Rev. C, 08-Nov-10 www.vishay.com 1 Si1071X Vishay Siliconix SPECIFICATIONS (TJ = ...