SI1065X

P-Channel 12 V (D-S) MOSFET Si1065X Vishay Siliconix PRODUCT SUMMARY VDS (V) - 12 RDS(on) () 0.156 at VGS = - 4.5 V 0.190 at VGS = - 2.5V 0.245 at VGS = - 1.8V ID (A) 1.18 1.07 0.49 Qg (Typ.) 6.7 nC FEATURES TrenchFET® Power MOSFET 100 % Rg Tested Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS Load Switch for Portable Devices SC-89 (3-LEADS) D1 6D D2 5D G3 4S Marking Code YY W XX Lot Traceability and Date Code Part # Code S G Top View Ordering Information: Si1065X-T1-GE3 (Lead (Pb)-free and Halogen-free) D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 °C) TA = 25 °C TA = 70 °C ID Pulsed Drain Current IDM Continuous Source-Drain Diode Current TA = 25 °C IS Maximum Power Dissipationa TA = 25 °C TA = 70 °C PD Operating Junction and Storage Temperature Range TJ, Tstg Limit - 12 ±8 - 1.18b, c - 0.94b, c -8 - 0.2b, c 0.236b, c 0.151b, c - 55 to 150 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta, b t 5 s Steady State State Notes: a. Maximum under steady state conditions is 650 °C/W. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. Symbol RthJA Typical 440 540 Maximum 530 650 Unit °C/W Document Number: 74320 For technical questions, contact: [email protected] www.vishay.com S12-1619-R...