SI3451DV

New Product Si3451DV Vishay Siliconix P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) 0.115 at VGS = - 4.5 V 0.205 at VGS = - 2.5 V ID (A)a - 2.8 - 2.1 Qg (Typ) 3.2 nC FEATURES TrenchFET® Power MOSFET PWM Optimized 100 % Rg tested RoHS COMPLIANT www.DataSheet4U.com TSOP-6 Top View 1 3 mm 6 (4) S 2 5 Marking Code AD XXX Lot Traceability and Date Code Part # Code (3) G 3 4 2.85 mm (1, 2, 5, 6) D Ordering Information: Si3451DV-T1-E3 (Lead (Pb)-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS Limit - 20 ± 12 - 2.8 - 2.3 - 2.6b, c - 2.1b, c - 10 - 1.76 - 1.04b, c 2.1 1.3 1.25b, c 0.8b, c - 55 to 150 Unit V Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Continuous Source-Drain Diode Current A TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C Maximum Power Dissipation TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range PD TJ, Tstg W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient Maximum Junction-to-Foot (Drain) b, d t ≤ 5 sec Steady State Symbol RthJA RthJF Typical 75 70 Maximum 100 85 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 sec. d. Maximum under Steady State conditions is 120 °C/W. Document Number: 73701 S-71597-Rev. B, 30-Jul-07 www.vishay.com 1 New Product Si3451DV Vishay S...