28C011T

28C011T 1 Megabit (128K x 8-Bit) EEPROM VCC VSS RES OE CE WE RES A0 I/O Buffer and Input Latch Control Logic Timing High Voltage Generator I/O0 I/O7 RDY/Busy www.DataSheet4U.com 28C011T Y Decoder Address Buffer and Latch Y Gating A6 A7 A16 X Decoder Memory Array Data Latch Memory Logic Diagram FEATURES: 128k x 8-bit EEPROM RAD-PAK® radiation-hardened against natural space radiation Total dose hardness: - > 100 krad (Si), depending upon space mission Excellent Single Event Effects: - No Latchup > 120 MeV/mg/cm2 - SEU > 90 MeV/mg/cm2 read mode Package: - 32-pin RAD-PAK® flat package - 32-pin Rad-Tolerant flat package - JEDEC-approved byte-wide pinout High speed: - 120, 150, and 200 ns maximum access times available High endurance: - 10,000 erase/write (in Page Mode), - 10 year data retention Page write mode: - 1 to 128 bytes Low power dissipation - 20 mW/MHz active (typical) - 110 µ W standby (maximum) DESCRIPTION: Maxwell Technologies’ 28C011T high-density 1 Megabit (128K x 8-Bit) EEPROM microcircuit features a greater than 100 krad (Si) total dose tolerance, depending upon space mission. The 28C011T is capable of in-system electrical byte and page programmability. It has a 128-byte page programming function to make its erase and write operations faster. It also features data polling and a Ready/Busy signal to indicate the completion of erase and programming operations. In the 28C010T, hardware data protection is provided with the RES pin, in add...