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SiHFR014

Vishay Siliconix

Power MOSFET

www.vishay.com IRFR014, IRFU014, SiHFR014, SiHFU014 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (...


Vishay Siliconix

SiHFR014

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Description
www.vishay.com IRFR014, IRFU014, SiHFR014, SiHFU014 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 60 VGS = 10 V 11 3.1 5.8 Single 0.20 DPAK (TO-252) D IPAK (TO-251) D GS GD S D G S N-Channel MOSFET FEATURES Dynamic dV/dt Rating Surface Mount (IRFR014, SiHFR014) Straight Lead (IRFU014, SiHFU014) Available in Tape and Reel Fast Switching Ease of Paralleling Simple Drive Requirements Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU, SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications. ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free Lead (Pb)-free DPAK (TO-252) SiHFR014-GE3 IRFR014PbF SiHFR014-E3 Note a. See device orientation. DPAK (TO-252) SiHFR014TRL-GE3 IRFR014TRLPbFa SiHFR014TL-E3a DPAK (TO-252) SiHFR014TR-GE3 IRFR014TRPbFa SiHFR014T-E3a IPAK (TO-251) SIHFU014-GE3 IRFU014PbF SiHFU014-E3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Conti...




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