SiHFR024

www.vishay.com IRFR024, IRFU024, SiHFR024, SiHFU024 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 60 VGS = 10 V 25 5.8 11 Single 0.10 D DPAK (TO-252) D IPAK (TO-251) D G S G GD S S N-Channel MOSFET FEATURES Dynamic dV/dt Rating Surface Mount (IRFR024, SiHFR024) Straight Lead (IRFU024, SiHFU024) Available in Tape and Reel Fast Switching Ease of Paralleling Simple Drive Requirements Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU, SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications. ORDERING INFORMATION Package DPAK (TO-252) Lead (Pb)-free and Halogen-free SiHFR024-GE3 Lead (Pb)-free IRFR024PbF SiHFR024-E3 Note a. See device orientation. DPAK (TO-252) SiHFR024TR-GE3 IRFR024TRPbFa SiHFR024T-E3a DPAK (TO-252) SiHFR024TRL-GE3 - IPAK (TO-251) SiHFU024-GE3 IRFU024PbF SiHFU024-E3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pu...