Power MOSFET
www.vishay.com
IRFR024, IRFU024, SiHFR024, SiHFU024
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (...
Description
www.vishay.com
IRFR024, IRFU024, SiHFR024, SiHFU024
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
60 VGS = 10 V
25 5.8 11 Single
0.10
D
DPAK (TO-252)
D
IPAK (TO-251)
D
G
S G
GD S
S N-Channel MOSFET
FEATURES Dynamic dV/dt Rating Surface Mount (IRFR024, SiHFR024) Straight Lead (IRFU024, SiHFU024) Available in Tape and Reel Fast Switching Ease of Paralleling Simple Drive Requirements Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU, SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.
ORDERING INFORMATION
Package
DPAK (TO-252)
Lead (Pb)-free and Halogen-free
SiHFR024-GE3
Lead (Pb)-free
IRFR024PbF SiHFR024-E3
Note a. See device orientation.
DPAK (TO-252) SiHFR024TR-GE3 IRFR024TRPbFa SiHFR024T-E3a
DPAK (TO-252) SiHFR024TRL-GE3 -
IPAK (TO-251) SiHFU024-GE3 IRFU024PbF SiHFU024-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current
Pu...
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