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SiHFU120 Dataheets PDF



Part Number SiHFU120
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description Power MOSFET
Datasheet SiHFU120 DatasheetSiHFU120 Datasheet (PDF)

www.vishay.com IRFR120, IRFU120, SiHFR120, SiHFU120 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () 100 VGS = 10 V Qg (Max.) (nC) 16 Qgs (nC) Qgd (nC) 4.4 7.7 Configuration Single 0.27 D DPAK (TO-252) D IPAK (TO-251) D G S G GD S S N-Channel MOSFET FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR120, SiHFR120) • Straight Lead (IRFU120, SiHFU120) • Available in Tape and Reel • Fast Switching • Ease of Paralleling • Material c.

  SiHFU120   SiHFU120


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www.vishay.com IRFR120, IRFU120, SiHFR120, SiHFU120 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () 100 VGS = 10 V Qg (Max.) (nC) 16 Qgs (nC) Qgd (nC) 4.4 7.7 Configuration Single 0.27 D DPAK (TO-252) D IPAK (TO-251) D G S G GD S S N-Channel MOSFET FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR120, SiHFR120) • Straight Lead (IRFU120, SiHFU120) • Available in Tape and Reel • Fast Switching • Ease of Paralleling • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU, SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications. ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free Lead (Pb)-free DPAK (TO-252) SiHFR120-GE3 IRFR120PbF SiHFR120-E3 Note a. See device orientation. DPAK (TO-252) SiHFR120TR-GE3a IRFR120TRPbFa SiHFR120T-E3a DPAK (TO-252) SiHFR120TRR-GE3a IRFR120TRRPbFa SiHFR120TR-E3a DPAK (TO-252) SiHFR120TRL-GE3a IRFR120TRLPbFa SiHFR120TL-E3a IPAK (TO-251) SiHFU120-GE3 IRFU120PbF SiHFU120-E3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor VGS at 10 V TC = 25 °C TC = 100 °C VDS VGS ID IDM Linear Derating Factor (PCB Mount)e Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Maximum Power Dissipation (PCB Mount)e Peak Diode Recovery dV/dtc TC = 25 °C TA = 25 °C EAS IAR EAR PD dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d for 10 s TJ, Tstg Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 25 V, starting TJ = 25 °C, L = 5.3 mH, Rg = 25 , IAS = 7.7 A (see fig. 12). c. ISD  9.2 A, dI/dt  110 A/μs, VDD  VDS, TJ  150 °C. d. 1.6 mm from case. e. When mounted on 1" square PCB (FR-4 or G-10 material). LIMIT 100 ± 20 7.7 4.9 31 0.33 0.020 210 7.7 4.2 42 2.5 5.5 - 55 to + 150 260 UNIT V A W/°C mJ A mJ W V/ns °C S13-0171-Rev. C, 04-Feb-13 1 Document Number: 91266 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com IRFR120, IRFU120, SiHFR120, SiHFU120 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL Maximum Junction-to-Ambient Maximum Junction-to-Ambient (PCB Mount)a RthJA RthJA Maximum Junction-to-Case (Drain) RthJC Note a. When mounted on 1" square PCB (FR-4 or G-10 material). MIN. - TYP. - MAX. 110 50 3.0 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic VDS VDS/TJ VGS(th) IGSS IDSS RDS(on) gfs VGS = 0 V, ID = 250 μA Reference to 25 °C, ID = 1 mA VDS = VGS, ID = 250 μA VGS = ± 20 V VDS = 100 V, VGS = 0 V VDS = 80 V, VGS = 0 V, TJ = 125 °C VGS = 10 V ID = 4.6 Ab VDS = 50 V, ID = 4.6 A 100 - -V - 0.13 - V/°C 2.0 - 4.0 V - - ± 100 nA - - 25 μA - - 250 - - 0.27  1.6 - -S Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf LD Internal Source Inductance Drain-Source Body Diode Characteristics LS VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 - 360 - 150 - pF - 34 - VGS = 10 V ID = 9.2 A, VDS = 80 V, see fig. 6 and 13b - - 16 - 4.4 nC - 7.7 - 6.8 - VDD = 50 V, ID = 9.2 A, Rg = 18 , RD = 5.2 , see fig. 10b - 27 ns - 18 - - 17 - Between lead, 6 mm (0.25") from package and center of die contact D G S - 4.5 nH - 7.5 - Continuous Source-Drain Diode Current IS MOSFET symbol showing the Pulsed Diode Forward Currenta integral reverse ISM p - n junction diode D G S - - 7.7 A - - 31 Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Forward Turn-On Time VSD TJ = 25 °C, IS = 7.7 A, VGS = 0 Vb - - 2.5 V trr - 130 260 ns TJ = 25 °C, IF = 9.2 A, dI/dt = 100 A/μsb Qrr - 0.65 1.3 μC ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse widt.


SiHFR120 SiHFU120 IRFR120


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