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IRFR120, IRFU120, SiHFR120, SiHFU120
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) ()
100 VGS = 10 V
Qg (Max.) (nC)
16
Qgs (nC) Qgd (nC)
4.4 7.7
Configuration
Single
0.27
D
DPAK (TO-252)
D
IPAK (TO-251)
D
G
S G
GD S
S N-Channel MOSFET
FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR120, SiHFR120) • Straight Lead (IRFU120, SiHFU120) • Available in Tape and Reel • Fast Switching • Ease of Paralleling • Material categorization: For definitions of
compliance please see www.vishay.com/doc?99912
DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU, SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.
ORDERING INFORMATION
Package Lead (Pb)-free and Halogen-free
Lead (Pb)-free
DPAK (TO-252) SiHFR120-GE3 IRFR120PbF SiHFR120-E3
Note a. See device orientation.
DPAK (TO-252) SiHFR120TR-GE3a IRFR120TRPbFa SiHFR120T-E3a
DPAK (TO-252) SiHFR120TRR-GE3a IRFR120TRRPbFa SiHFR120TR-E3a
DPAK (TO-252) SiHFR120TRL-GE3a IRFR120TRLPbFa SiHFR120TL-E3a
IPAK (TO-251) SiHFU120-GE3 IRFU120PbF SiHFU120-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta Linear Derating Factor
VGS at 10 V
TC = 25 °C TC = 100 °C
VDS VGS
ID
IDM
Linear Derating Factor (PCB Mount)e
Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Maximum Power Dissipation (PCB Mount)e Peak Diode Recovery dV/dtc
TC = 25 °C TA = 25 °C
EAS IAR EAR
PD
dV/dt
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d
for 10 s
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 °C, L = 5.3 mH, Rg = 25 , IAS = 7.7 A (see fig. 12). c. ISD 9.2 A, dI/dt 110 A/μs, VDD VDS, TJ 150 °C. d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
LIMIT 100 ± 20 7.7 4.9 31 0.33 0.020 210 7.7 4.2 42 2.5 5.5
- 55 to + 150 260
UNIT V
A
W/°C mJ A mJ W V/ns °C
S13-0171-Rev. C, 04-Feb-13
1
Document Number: 91266
For technical questions, contact:
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
IRFR120, IRFU120, SiHFR120, SiHFU120
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient (PCB Mount)a
RthJA RthJA
Maximum Junction-to-Case (Drain)
RthJC
Note a. When mounted on 1" square PCB (FR-4 or G-10 material).
MIN. -
TYP. -
MAX. 110 50 3.0
UNIT °C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance Forward Transconductance Dynamic
VDS VDS/TJ VGS(th)
IGSS
IDSS
RDS(on) gfs
VGS = 0 V, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
VGS = ± 20 V
VDS = 100 V, VGS = 0 V
VDS = 80 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 4.6 Ab
VDS = 50 V, ID = 4.6 A
100 -
-V
- 0.13 - V/°C
2.0 - 4.0 V
- - ± 100 nA
- - 25 μA
- - 250
- - 0.27
1.6 -
-S
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
Internal Drain Inductance
Ciss Coss Crss Qg Qgs Qgd td(on)
tr td(off)
tf
LD
Internal Source Inductance Drain-Source Body Diode Characteristics
LS
VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5
- 360 - 150 - pF - 34 -
VGS = 10 V
ID = 9.2 A, VDS = 80 V, see fig. 6 and 13b
-
- 16 - 4.4 nC - 7.7
- 6.8 -
VDD = 50 V, ID = 9.2 A, Rg = 18 , RD = 5.2 , see fig. 10b
- 27 ns
- 18 -
- 17 -
Between lead, 6 mm (0.25") from package and center of die contact
D
G S
- 4.5 nH
- 7.5 -
Continuous Source-Drain Diode Current
IS
MOSFET symbol showing the
Pulsed Diode Forward Currenta
integral reverse ISM p - n junction diode
D
G S
- - 7.7 A
- - 31
Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Forward Turn-On Time
VSD
TJ = 25 °C, IS = 7.7 A, VGS = 0 Vb
- - 2.5 V
trr
- 130 260 ns TJ = 25 °C, IF = 9.2 A, dI/dt = 100 A/μsb
Qrr
-
0.65 1.3
μC
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse widt.