IRFR1N60A

IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A www.vishay.com Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Max.) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 600 VGS = 10 V 14 2.7 8.1 Single 7.0 D DPAK (TO-252) D IPAK (TO-251) D G S G GD S S N-Channel MOSFET FEATURES Low Gate Charge Qg Results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply Power Factor Correction TYPICAL SMPS TOPOLOGIES Low Power Single Transistor Flyback ORDERING INFORMATION Package DPAK (TO-252) Lead (Pb)-free and Halogen-free SiHFR1N60A-GE3 Lead (Pb)-free IRFR1N60APbF SiHFR1N60A-E3 DPAK (TO-252) SiHFR1N60ATRL-GE3a IRFR1N60ATRLPbFa SiHFR1N60ATL-E3a DPAK (TO-252) SiHFR1N60ATR-GE3a IRFR1N60ATRPbFa SiHFR1N60AT-E3a DPAK (TO-252) SiHFR1N60ATRR-GE3a IRFR1N60ATRRPbFa SiHFR1N60ATR-E3a IPAK (TO-251) SiHFU1N60A-GE3 IRFU1N60APbF SiHFU1N60A-E3 Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor VGS at 10 V TC = 25 °C TC = 100 °C VDS VGS ID IDM Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalan...