SiHFR210

www.vishay.com IRFR210, IRFU210, SiHFR210, SiHFU210 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 200 VGS = 10 V 8.2 1.8 4.5 Single 1.5 D DPAK (TO-252) D IPAK (TO-251) D G GS GD S S N-Channel MOSFET FEATURES Dynamic dV/dt Rating Repetitive Avalanche Rated Surface Mount (IRFR210, SiHFR210) Straight Lead (IRFU210, SiHFU210) Available in Tape and Reel Fast Switching Ease of Paralleling Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU, SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications. ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free Lead (Pb)-free DPAK (TO-252) SiHFR210-GE3 IRFR210PbF SiHFR210-E3 Note a. See device orientation. DPAK (TO-252) SiHFR210TRL-GE3a IRFR210TRLPbFa SiHFR210TL-E3a DPAK (TO-252) IRFR210TRPbFa SiHFR210T-E3a ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Fac...