SiHFR220

www.vishay.com IRFR220, IRFU220, SiHFR220, SiHFU220 Vishay Siliconix Power MOSFET DPAK (TO-252) D IPAK (TO-251) D D G GS GD S S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 200 VGS = 10 V 14 3.0 7.9 Single 0.80 FEATURES Dynamic dV/dt rating Repetitive avalanche rated Surface-mount (IRFR220, SiHFR220) Straight lead (IRFU220, SiHFU220) Available in tape and reel Fast switching Available Ease of paralleling Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU, SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface-mount applications. ORDERING INFORMATION PACKAGE DPAK (TO-252) DPAK (TO-252) Lead (Pb)-free and halogen-free SiHFR220-GE3 SiHFR220TRL-GE3 Lead (Pb)-free IRFR220PbF IRFR220TRLPbF a Lead (Pb)-free and halogen-free IRFR220PbF-BE3 b IRFR220TRLPbF-BE3 ab Notes a. See device orientation b. “-BE3” denotes alternate manufacturing location DPAK (TO-252) DPAK (TO-252) - - IRFR220TRPbF a IRFR220TRRPbF a IRFR220TRPbF-BE3 ab - IPAK (TO-251) SiHFU220...