Power MOSFET
www.vishay.com
IRFR320, IRFU320, SiHFR320, SiHFU320
Vishay Siliconix
Power MOSFET
DPAK (TO-252)
D
IPAK (TO-251)
D
D...
Description
www.vishay.com
IRFR320, IRFU320, SiHFR320, SiHFU320
Vishay Siliconix
Power MOSFET
DPAK (TO-252)
D
IPAK (TO-251)
D
D G
GS
GD S
S N-Channel MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
400
VGS = 10 V
1.8
20
3.3
11
Single
FEATURES
Dynamic dV/dt rating
Repetitive avalanche rated
Surface-mount (IRFR320,SiHFR320)
Straight lead (IRFU320,SiHFU320)
Available in tape and reel Fast switching
Available
Ease of paralleling
Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
DESCRIPTION
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU, SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface-mount applications.
ORDERING INFORMATION
Package
DPAK (TO-252)
Lead (Pb)-free and halogen-free
SiHFR320-GE3 IRFR320PbF-BE3
Lead (Pb)-free
IRFR320PbF
Note a. See device orientation
DPAK (TO-252) SiHFR320TRL-GE3a IRFR320TRLPbF-BE3 IRFR320TRLPbFa
DPAK (TO-252) SiHFR320TR-GE3 a IRFR320TRPbF-BE3 IRFR320TRPbF a
DPAK (TO-252) -
IPAK (TO-251) SiHFU320-GE3
IRFR320TRRPbF a IRFU320PbF
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARA...
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