Power MOSFET
IRFR430A, IRFU430A, SiHFR430A, SiHFU430A
www.vishay.com
Vishay Siliconix
Power MOSFET
DPAK (TO-252)
D
IPAK (TO-251)...
Description
IRFR430A, IRFU430A, SiHFR430A, SiHFU430A
www.vishay.com
Vishay Siliconix
Power MOSFET
DPAK (TO-252)
D
IPAK (TO-251)
D
D G
GS
GD S
S N-Channel MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC)
500
VGS = 10 V
1.7
24
6.5
Qgd (nC) Configuration
13 Single
FEATURES
Low gate charge Qg results in simple drive requirement
Improved gate, avalanche, and dynamic dV/dt ruggedness
Fully characterized capacitance and avalanche voltage and current
Available
Effective Coss specified
Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
APPLICATIONS Switch mode power supply (SMPS) Uninterruptible power supply High speed power switching
ORDERING INFORMATION
Package
DPAK (TO-252)
Lead (Pb)-free and halogen-free
SiHFR430A-GE3
Lead (Pb)-free
IRFR430APbF
Note a. See device orientation
DPAK (TO-252) SiHFR430ATR-GE3 a IRFR430ATRPbFa
DPAK (TO-252) SiHFR430ATRL-GE3 a IRFR430ATRLPbFa
DPAK (TO-252) SiHFR430ATRR-GE3 a -
IPAK (TO-251) SiHFU430A-GE3 IRFU430APbF
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source voltage
VDS
Gate-source voltage
Continuous drain current Pulsed drain current a Linear derating factor
VGS
VGS at 10 V
TC = 25 °C TC = 100 °C
ID
IDM
Single pulse avalanche energy b Repetitive avalanche current a Repetitive avalanche energy a Maximum power dissipation Peak diode recovery dV/dt c
TC = 25 °C
EAS IAR EAR PD dV/dt
Operating junc...
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