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IRFU430A Dataheets PDF



Part Number IRFU430A
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description Power MOSFET
Datasheet IRFU430A DatasheetIRFU430A Datasheet (PDF)

IRFR430A, IRFU430A, SiHFR430A, SiHFU430A www.vishay.com Vishay Siliconix Power MOSFET DPAK (TO-252) D IPAK (TO-251) D D G GS GD S S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) 500 VGS = 10 V 1.7 24 6.5 Qgd (nC) Configuration 13 Single FEATURES • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche, and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current Available • Effec.

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IRFR430A, IRFU430A, SiHFR430A, SiHFU430A www.vishay.com Vishay Siliconix Power MOSFET DPAK (TO-252) D IPAK (TO-251) D D G GS GD S S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) 500 VGS = 10 V 1.7 24 6.5 Qgd (nC) Configuration 13 Single FEATURES • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche, and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current Available • Effective Coss specified • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Switch mode power supply (SMPS) • Uninterruptible power supply • High speed power switching ORDERING INFORMATION Package DPAK (TO-252) Lead (Pb)-free and halogen-free SiHFR430A-GE3 Lead (Pb)-free IRFR430APbF Note a. See device orientation DPAK (TO-252) SiHFR430ATR-GE3 a IRFR430ATRPbFa DPAK (TO-252) SiHFR430ATRL-GE3 a IRFR430ATRLPbFa DPAK (TO-252) SiHFR430ATRR-GE3 a - IPAK (TO-251) SiHFU430A-GE3 IRFU430APbF ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage VDS Gate-source voltage Continuous drain current Pulsed drain current a Linear derating factor VGS VGS at 10 V TC = 25 °C TC = 100 °C ID IDM Single pulse avalanche energy b Repetitive avalanche current a Repetitive avalanche energy a Maximum power dissipation Peak diode recovery dV/dt c TC = 25 °C EAS IAR EAR PD dV/dt Operating junction and storage temperature range Soldering recommendations (peak temperature) d For 10 s TJ, Tstg Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. Starting TJ = 25 °C, L = 11 mH, Rg = 25 Ω, IAS = 5.0 A (see fig. 12) c. ISD ≤ 5.0 A, dI/dt ≤ 320 A/μs, VDD ≤ VDS, TJ ≤ 150 °C d. 1.6 mm from case LIMIT 500 ± 30 5.0 3.2 20 0.91 130 5.0 11 110 3.0 -55 to +150 300 UNIT V A W/°C mJ A mJ W V/ns °C S21-0373-Rev. E, 19-Apr-2021 1 Document Number: 91276 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFR430A, IRFU430A, SiHFR430A, SiHFU430A www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL Maximum junction-to-ambient Case-to-sink, flat, greased surface Maximum junction-to-case (drain) RthJA RthCS RthJC TYP. - 0.50 - MAX. 62 1.1 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage VDS temperature coefficient Gate-source threshold voltage Gate-source leakage Zero gate voltage drain current Drain-source on-state resistance Forward transconductance Dynamic VDS ΔVDS/TJ VGS(th) IGSS IDSS RDS(on) gfs VGS = 0 V, ID = 250 μA Reference to 25 °C, ID = 1 mA VDS = VGS, ID = 250 μA VGS = ± 30 V VDS = 500 V, VGS = 0 V VDS = 400 V, VGS = 0 V, TJ = 125 °C VGS = 10 V ID = 3.0 Ab VDS = 50 V, ID = 3.0 A 500 - - V - 0.60 - V/°C 2.0 - 4.5 V - - ± 100 nA - - 25 μA - - 250 - - 1.7 Ω 2.3 - - S Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Output capacitance Coss Effective output capacitance Total gate charge Gate-source charge Gate-drain charge Turn-on delay time Rise time Turn-off delay time Fall time Drain-Source Body Diode Characteristics Coss eff. Qg Qgs Qgd td(on) tr td(off) tf VGS = 0 V, - VDS = 25 V, - f = 1.0 MHz, see fig. 5 - VDS = 1.0 V, f = 1.0 MHz - VGS = 10 V VDS = 400 V, f = 1.0 MHz - VDS = 0 V to 400 Vc - - VGS = 10 V ID = 5.0 A, VDS = 400 V, see fig. 6 and 13b - - - VDD = 250 V, ID = 5.0 A, - Rg = 15 Ω, RD = 50 Ω, see fig. 10b - - 490 - 75 - pF 4.5 - 750 - 25 - pF 51 - - 24 - 6.5 nC - 13 8.7 - 27 - ns 17 - 16 - Continuous source-drain diode current Pulsed diode forward current a IS MOSFET symbol showing the integral reverse ISM p - n junction diode D G S - - 5.0 A - - 20 Body diode voltage Body diode reverse recovery time Body diode reverse recovery charge Forward turn-on time VSD TJ = 25 °C, IS = 5.0 A, VGS = 0 Vb - - 1.5 V trr - 410 620 ns TJ = 25 °C, IF = 5.0 A, dI/dt = 100 A/μsb Qrr - 1.4 2.1 μC ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width ≤ 300 μs; duty cycle ≤ 2 % c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDS S21-0373-Rev. E, 19-Apr-2021 2 Document Number: 91276 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIME.


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