IRFR430A, IRFU430A, SiHFR430A, SiHFU430A
www.vishay.com
Vishay Siliconix
Power MOSFET
DPAK (TO-252)
D
IPAK (TO-251)
D
D G
GS
GD S
S N-Channel MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC)
500
VGS = 10 V
1.7
24
6.5
Qgd (nC) Configuration
13 Single
FEATURES
• Low gate charge Qg results in simple drive requirement
• Improved gate, avalanche, and dynamic dV/dt ruggedness
• Fully characterized capacitance and avalanche voltage and current
Available
• Effective Coss specified
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
APPLICATIONS • Switch mode power supply (SMPS) • Uninterruptible power supply • High speed power switching
ORDERING INFORMATION
Package
DPAK (TO-252)
Lead (Pb)-free and halogen-free
SiHFR430A-GE3
Lead (Pb)-free
IRFR430APbF
Note a. See device orientation
DPAK (TO-252) SiHFR430ATR-GE3 a IRFR430ATRPbFa
DPAK (TO-252) SiHFR430ATRL-GE3 a IRFR430ATRLPbFa
DPAK (TO-252) SiHFR430ATRR-GE3 a -
IPAK (TO-251) SiHFU430A-GE3 IRFU430APbF
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source voltage
VDS
Gate-source voltage
Continuous drain current Pulsed drain current a Linear derating factor
VGS
VGS at 10 V
TC = 25 °C TC = 100 °C
ID
IDM
Single pulse avalanche energy b Repetitive avalanche current a Repetitive avalanche energy a Maximum power dissipation Peak diode recovery dV/dt c
TC = 25 °C
EAS IAR EAR PD dV/dt
Operating junction and storage temperature range Soldering recommendations (peak temperature) d
For 10 s
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. Starting TJ = 25 °C, L = 11 mH, Rg = 25 Ω, IAS = 5.0 A (see fig. 12) c. ISD ≤ 5.0 A, dI/dt ≤ 320 A/μs, VDD ≤ VDS, TJ ≤ 150 °C d. 1.6 mm from case
LIMIT 500 ± 30 5.0 3.2 20 0.91 130 5.0 11 110 3.0
-55 to +150 300
UNIT V
A
W/°C mJ A mJ W V/ns °C
S21-0373-Rev. E, 19-Apr-2021
1
Document Number: 91276
For technical questions, contact:
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFR430A, IRFU430A, SiHFR430A, SiHFU430A
www.vishay.com
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum junction-to-ambient Case-to-sink, flat, greased surface Maximum junction-to-case (drain)
RthJA RthCS RthJC
TYP. -
0.50 -
MAX. 62 1.1
UNIT °C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-source breakdown voltage VDS temperature coefficient Gate-source threshold voltage Gate-source leakage
Zero gate voltage drain current
Drain-source on-state resistance Forward transconductance Dynamic
VDS ΔVDS/TJ VGS(th)
IGSS
IDSS
RDS(on) gfs
VGS = 0 V, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
VGS = ± 30 V
VDS = 500 V, VGS = 0 V
VDS = 400 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 3.0 Ab
VDS = 50 V, ID = 3.0 A
500
-
-
V
-
0.60
-
V/°C
2.0
-
4.5
V
-
-
± 100 nA
-
-
25
μA
-
-
250
-
-
1.7
Ω
2.3
-
-
S
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Output capacitance
Coss
Effective output capacitance Total gate charge Gate-source charge Gate-drain charge Turn-on delay time Rise time Turn-off delay time Fall time Drain-Source Body Diode Characteristics
Coss eff. Qg Qgs Qgd td(on) tr td(off) tf
VGS = 0 V,
-
VDS = 25 V,
-
f = 1.0 MHz, see fig. 5
-
VDS = 1.0 V, f = 1.0 MHz
-
VGS = 10 V VDS = 400 V, f = 1.0 MHz
-
VDS = 0 V to 400 Vc
-
-
VGS = 10 V
ID = 5.0 A, VDS = 400 V, see fig. 6 and 13b
-
-
-
VDD = 250 V, ID = 5.0 A,
-
Rg = 15 Ω, RD = 50 Ω, see fig. 10b
-
-
490
-
75
-
pF
4.5
-
750
-
25
-
pF
51
-
-
24
-
6.5
nC
-
13
8.7
-
27
-
ns
17
-
16
-
Continuous source-drain diode current Pulsed diode forward current a
IS
MOSFET symbol showing the
integral reverse
ISM
p - n junction diode
D
G S
-
-
5.0
A
-
-
20
Body diode voltage Body diode reverse recovery time Body diode reverse recovery charge Forward turn-on time
VSD
TJ = 25 °C, IS = 5.0 A, VGS = 0 Vb
-
-
1.5
V
trr
-
410
620
ns
TJ = 25 °C, IF = 5.0 A, dI/dt = 100 A/μsb
Qrr
-
1.4
2.1
μC
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width ≤ 300 μs; duty cycle ≤ 2 % c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDS
S21-0373-Rev. E, 19-Apr-2021
2
Document Number: 91276
For technical questions, contact:
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIME.