IRFR9020, IRFU9020, SiHFR9020, SiHFU9020
www.vishay.com
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
- 50 VGS = - 10 V
14 6.5 6.5 Single
0.28
S
DPAK (TO-252)
D
IPAK (TO-251)
D
G
GS
GD S
D P-Channel MOSFET
FEATURES
• Surface Mountable (Order As IRFR9020, SiHFR9020)
• Straight Lead Option (Order As IRFU9020, SiHFU9020)
• Repetitive Avalanche Ratings
• Dynamic dV/dt Rating
• Simple Drive Requirements
• Ease of Paralleling
• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
DESCRIPTION
The power MOSFET technology is the key to Vishay’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and diode recovery dV/dt. The power MOSFET transistors also feature all of the well established advantages of MOSFET’S such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. Surface mount packages enhance circuit performance by reducing stray inductances and capacitance. The TO-252 surface mount package brings the advantages of power MOSFET’s to high volume applications where PC board surface mounting is desirable. The surface mount option IRFR9020, SiHFR9020 is provided on 16mm tape. The straight lead option IRFU9020, SiHFU9020 of the device is called the IPAK (TO-251). They are well suited for applications where limited heat dissipation is required such as, computers and peripherals, telecommunication equipment, DC/DC converters, and a wide range of consumer products.
ORDERING INFORMATION
Package Lead (Pb)-free and Halogen-free
DPAK (TO-252) SiHFR9020-GE3
Lead (Pb)-free
Note a. See device orientation.
IRFR9020PbF SiHFR9020-E3
DPAK (TO-252) SiHFR9020TR-GE3a IRFR9020TRPbFa SiHFR9020T-E3a
DPAK (TO-252) SiHFR9020TRL-GE3a IRFR9020TRLPbFa SiHFR9020TL-E3a
IPAK (TO-251) SiHFU9020-GE3 IRFU9020PbF SiHFU9020-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta Linear Derating Factor
VGS at - 10 V
TC = 25 °C TC = 100 °C
VDS VGS
ID
IDM
Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya
Maximum Power Dissipation Peak Diode Recovery dV/dtc
TC = 25 °C
EAS IAR EAR PD dV/dt
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d
for 10 s
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 16). b. VDD = - 25 V, Starting TJ = 25 °C, L = 5.1 mH, Rg = 25 , Peak IL = - 9.9 A c. ISD - 9.9 A, dI/dt -120 A/μs, VDD 40 V, TJ 150 °C. d. 0.063" (1.6 mm) from case. e. When mounted on 1" square PCB (FR-4 or G-10 material).
LIMIT - 50 ± 20 - 9.9 - 6.3 - 40 0.33 250 - 9.9 4.2 42 5.8 - 55 to + 150 300
UNIT V
A
W/°C mJ A mJ W V/ns °C
S13-0169-Rev. D, 04-Feb-13
1
Document Number: 90350
For technical questions, contact:
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFR9020, IRFU9020, SiHFR9020, SiHFU9020
www.vishay.com
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient Case-to-Sink Maximum Junction-to-Case (Drain)
RthJA RthCS RthJC
MIN. -
TYP. -
1.7 -
MAX. 110
3.0
UNIT °C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance Forward Transconductance Dynamic
VDS VGS(th) IGSS
IDSS
RDS(on) gfs
VGS = 0 V, ID = - 250 μA
VDS = VGS, ID = - 250 μA
VGS = ± 20 V
VDS = max. rating, VGS = 0 V
VDS = 0.8 x max. rating, VGS = 0 V, TJ = 125 °C
VGS = - 10 V
ID = 5.7 Ab
VDS - 50 V, IDS = - 5.7 A
- 50 - 2.0
2.3
0.20 3.5
- 4.0 ± 500 250 1000 0.28
-
V V nA
μA
S
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance
Ciss Coss Crss Qg Qgs Qgd td(on)
tr td(off)
tf LD
Internal Source Inductance
LS
Drain-Source Body Diode Characteristics
VGS = 0 V, VDS = - 25 V, f = 1.0 MHz, see fig. 9
VGS = - 10 V
ID = - 9.7 A, VDS = 0.8 x max. rating, see fig. 18
(Independent operating
temperature)
VDD = - 25 V, ID = - 9.7 A, Rg = 18 , RD = 2.4 , see fig. 17
(Independent operating temperature)
Between lead, 6 mm (0.25") from package and center of die contact.
D
G S
-
-
490 320 - pF 70 9.4 14 4.3 6.5 nC 4.3 6.5 8.2 12 57 66
ns 12 18 25 38 4.5 -
nH 7.5 -
Continuous Source-Drain Diode Current.