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IRFR9020 Dataheets PDF



Part Number IRFR9020
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description Power MOSFET
Datasheet IRFR9020 DatasheetIRFR9020 Datasheet (PDF)

IRFR9020, IRFU9020, SiHFR9020, SiHFU9020 www.vishay.com Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration - 50 VGS = - 10 V 14 6.5 6.5 Single 0.28 S DPAK (TO-252) D IPAK (TO-251) D G GS GD S D P-Channel MOSFET FEATURES • Surface Mountable (Order As IRFR9020, SiHFR9020) • Straight Lead Option (Order As IRFU9020, SiHFU9020) • Repetitive Avalanche Ratings • Dynamic dV/dt Rating • Simple Drive Requirements • Ease of Parall.

  IRFR9020   IRFR9020


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IRFR9020, IRFU9020, SiHFR9020, SiHFU9020 www.vishay.com Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration - 50 VGS = - 10 V 14 6.5 6.5 Single 0.28 S DPAK (TO-252) D IPAK (TO-251) D G GS GD S D P-Channel MOSFET FEATURES • Surface Mountable (Order As IRFR9020, SiHFR9020) • Straight Lead Option (Order As IRFU9020, SiHFU9020) • Repetitive Avalanche Ratings • Dynamic dV/dt Rating • Simple Drive Requirements • Ease of Paralleling • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION The power MOSFET technology is the key to Vishay’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and diode recovery dV/dt. The power MOSFET transistors also feature all of the well established advantages of MOSFET’S such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. Surface mount packages enhance circuit performance by reducing stray inductances and capacitance. The TO-252 surface mount package brings the advantages of power MOSFET’s to high volume applications where PC board surface mounting is desirable. The surface mount option IRFR9020, SiHFR9020 is provided on 16mm tape. The straight lead option IRFU9020, SiHFU9020 of the device is called the IPAK (TO-251). They are well suited for applications where limited heat dissipation is required such as, computers and peripherals, telecommunication equipment, DC/DC converters, and a wide range of consumer products. ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free DPAK (TO-252) SiHFR9020-GE3 Lead (Pb)-free Note a. See device orientation. IRFR9020PbF SiHFR9020-E3 DPAK (TO-252) SiHFR9020TR-GE3a IRFR9020TRPbFa SiHFR9020T-E3a DPAK (TO-252) SiHFR9020TRL-GE3a IRFR9020TRLPbFa SiHFR9020TL-E3a IPAK (TO-251) SiHFU9020-GE3 IRFU9020PbF SiHFU9020-E3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor VGS at - 10 V TC = 25 °C TC = 100 °C VDS VGS ID IDM Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc TC = 25 °C EAS IAR EAR PD dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d for 10 s TJ, Tstg Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 16). b. VDD = - 25 V, Starting TJ = 25 °C, L = 5.1 mH, Rg = 25 , Peak IL = - 9.9 A c. ISD  - 9.9 A, dI/dt  -120 A/μs, VDD  40 V, TJ  150 °C. d. 0.063" (1.6 mm) from case. e. When mounted on 1" square PCB (FR-4 or G-10 material). LIMIT - 50 ± 20 - 9.9 - 6.3 - 40 0.33 250 - 9.9 4.2 42 5.8 - 55 to + 150 300 UNIT V A W/°C mJ A mJ W V/ns °C S13-0169-Rev. D, 04-Feb-13 1 Document Number: 90350 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFR9020, IRFU9020, SiHFR9020, SiHFU9020 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL Maximum Junction-to-Ambient Case-to-Sink Maximum Junction-to-Case (Drain) RthJA RthCS RthJC MIN. - TYP. - 1.7 - MAX. 110 3.0 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic VDS VGS(th) IGSS IDSS RDS(on) gfs VGS = 0 V, ID = - 250 μA VDS = VGS, ID = - 250 μA VGS = ± 20 V VDS = max. rating, VGS = 0 V VDS = 0.8 x max. rating, VGS = 0 V, TJ = 125 °C VGS = - 10 V ID = 5.7 Ab VDS  - 50 V, IDS = - 5.7 A - 50 - 2.0 2.3 0.20 3.5 - 4.0 ± 500 250 1000 0.28 - V V nA μA  S Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf LD Internal Source Inductance LS Drain-Source Body Diode Characteristics VGS = 0 V, VDS = - 25 V, f = 1.0 MHz, see fig. 9 VGS = - 10 V ID = - 9.7 A, VDS = 0.8 x max. rating, see fig. 18 (Independent operating temperature) VDD = - 25 V, ID = - 9.7 A, Rg = 18 , RD = 2.4 , see fig. 17 (Independent operating temperature) Between lead, 6 mm (0.25") from package and center of die contact. D G S - - 490 320 - pF 70 9.4 14 4.3 6.5 nC 4.3 6.5 8.2 12 57 66 ns 12 18 25 38 4.5 - nH 7.5 - Continuous Source-Drain Diode Current.


SiHFU9020 IRFR9020 IRFU9020


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