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SiHFR9220 Dataheets PDF



Part Number SiHFR9220
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description Power MOSFET
Datasheet SiHFR9220 DatasheetSiHFR9220 Datasheet (PDF)

IRFR9220, IRFU9220, SiHFR9220, SiHFU9220 www.vishay.com Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration - 200 VGS = - 10 V 20 3.3 11 Single 1.5 S DPAK (TO-252) D IPAK (TO-251) D G GS GD S D P-Channel MOSFET FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR9220, SiHFR9220) • Straight Lead (IRFUFU9220, SiHFU9220) • Available in Tape and Reel • P-Channel • Fast Switching • Material categ.

  SiHFR9220   SiHFR9220



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IRFR9220, IRFU9220, SiHFR9220, SiHFU9220 www.vishay.com Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration - 200 VGS = - 10 V 20 3.3 11 Single 1.5 S DPAK (TO-252) D IPAK (TO-251) D G GS GD S D P-Channel MOSFET FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR9220, SiHFR9220) • Straight Lead (IRFUFU9220, SiHFU9220) • Available in Tape and Reel • P-Channel • Fast Switching • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU, SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications. ORDERING INFORMATION Package DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) Lead (Pb)-free and Halogen-free Lead (Pb)-free SiHFR9220-GE3 IRFR9220PbF SiHFR9220-E3 SiHFR9220TRL-GE3a IRFR9220TRLPbFa SiHFR9220TL-E3a SiHFR9220TRR-GE3a IRFR9220TRRPbFa SiHFR9220TR-E3a SiHFR9220TR-GE3a IRFR9220TRPbFa SiHFR9220T-E3a Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Linear Derating Factor (PCB Mount)e Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Maximum Power Dissipation (PCB Mount)e Peak Diode Recovery dV/dtc VGS at - 10 V TC = 25 °C TC = 100 °C VDS VGS ID IDM TC = 25 °C TA = 25 °C EAS IAR EAR PD dV/dt - 200 ± 20 - 3.6 - 2.3 - 14 0.33 0.020 310 - 3.6 4.2 42 2.5 - 5.0 Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d for 10 s TJ, Tstg Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = - 50 V, Starting TJ = 25 °C, L = 35 mH, Rg = 25 , IAS = - 3.6 A (see fig. 12). c. ISD  - 3.9 A, dI/dt  95 A/μs, VDD  VDS, TJ  150 °C. d. 1.6 mm from case. e. When mounted on 1" square PCB (FR-4 or G-10 material). - 55 to + 150 260 IPAK (TO-251) SiHFU9220-GE3 IRFU9220PbF SiHFU9220-E3 UNIT V A W/°C mJ A mJ W V/ns °C S13-0166-Rev. E, 04-Feb-13 1 Document Number: 91283 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFR9220, IRFU9220, SiHFR9220, SiHFU9220 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL Maximum Junction-to-Ambient Maximum Junction-to-Ambient (PCB Mount)a RthJA RthJA Maximum Junction-to-Case (Drain) RthJC Note a. When mounted on 1" square PCB (FR-4 or G-10 material). MIN. - TYP. - MAX. 110 50 3.0 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic VDS VDS/TJ VGS(th) IGSS IDSS RDS(on) gfs VGS = 0 V, ID = - 250 μA Reference to 25 °C, ID = - 1 mA VDS = VGS, ID = - 250 μA VGS = ± 20 V VDS = - 200 V, VGS = 0 V VDS = - 160 V, VGS = 0 V, TJ = 125 °C VGS = - 10 V ID = - 2.2 Ab VDS = - 50 V, ID = - 2.2 A - 200 - - 2.0 - 1.1 - 0.22 - - 4.0 ± 100 - 100 - 500 1.5 - V V/°C V nA μA  S Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf LD Internal Source Inductance Drain-Source Body Diode Characteristics LS VGS = 0 V, VDS = - 25 V, f = 1.0 MHz, see fig. 5 VGS = - 10 V ID = - 3.9 A, VDS = - 160 V, see fig. 6 and 13b VDD = - 100 V, ID = - 3.9 A, Rg = 18 , RD = 24 , see fig. 10b Between lead, 6 mm (0.25") from package and center of die contact D G S - - - 340 110 - pF 33 - - 20 - 3.3 nC - 11 8.8 27 - ns 7.3 19 - 4.5 nH 7.5 - Continuous Source-Drain Diode Current IS MOSFET symbol showing the Pulsed Diode Forward Currenta integral reverse ISM p - n junction diode D G S - - - 3.6 A - - - 14 Body Diode Voltage VSD TJ = 25 °C, IS = - 3.6 A, VGS = 0 Vb - - - 6.3 V Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge trr TJ = 25 °C, IF = - 3.9 A, dI/dt = 100 A/μsb - 150 300 ns Qrr - 0.97.


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