P9NC60

N-CHANNEL 600V - 0.6Ω - 9A - TO-220/TO-220FP PowerMesh™II MOSFET TYPE STP9NC60 STP9NC60FP www.DataSheet4U.com s s s s s STP9NC60 STP9NC60FP VDSS 600 V 600 V RDS(on) < 0.75 Ω < 0.75 Ω ID 9.0 A 9.0 A (*) TYPICAL RDS(on) = 0.6 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED TO-220 3 1 2 3 1 2 DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVER s TO-220FP INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (1) PTOT dv/dt VISO Tstg Tj . Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature 9 5.7 36 125 1.0 Value STP9NC60 600 600 ±30 9 (*) 5.7 (*) 36 (*) 40 0.32 3.5 2500 – 55 to 150 (1)ISD ≤ 9A, di/dt ≤100A/µs, VDD ≤ V (BR)DSS, T j ≤ T JMAX (*) Limited only by Maximum Temperature Allow...