Document
AP60L02S/P
Advanced Power Electronics Corp.
▼ Low Gate Charge ▼ Simple Drive Requirement
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N-CHANNEL ENHANCEMENT MODE POWER MOSFET
D
BVDSS RDS(ON) ID
25V 12mΩ 50A
▼ Fast Switching G S
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP60L02P) is available for low-profile applications. G D G D S
TO-263(S)
TO-220(P)
S Rating 25 ± 20 50 32 180 62.5 0.5 Units V V A A A W W/ ℃ ℃ ℃
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
1
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
-55 to 150 -55 to 150
Thermal Data
Symbol Rthj-case Rthj-amb Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 2.0 62 Unit ℃/W ℃/W
Data & specifications subject to change without notice
200218032
AP60L02S/P
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=0V, ID=250uA
Min. 25 1 -
Typ. 0.037
Max. Units 12 26 3 1 25 ±100 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
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Static Drain-Source On-Resistance
VGS=10V, ID=25A VGS=4.5V, ID=20A
30 21 2.8 16 8 75 22 20 605 415 195
VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C)
o o
VDS=VGS, ID=250uA VDS=10V, ID=25A VDS=25V, VGS=0V VDS=20V, VGS=0V VGS= ± 20V ID=25A VDS=20V VGS=5V VDS=15V ID=20A RG=3.3Ω,VGS=10V RD=0.75Ω VGS=0V VDS=25V f=1.0MHz
Gate-Source Leakage Total Gate Charge
2
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
2
Source-Drain Diode
Symbol IS ISM VSD Parameter
Continuous Source Current ( Body Diode )
Test Conditions VD=VG=0V , VS=1.26V
1
Min. -
Typ. -
Max. Units 50 180 1.26 A A V
Pulsed Source Current ( Body Diode )
Forward On Voltage
2
Tj=25℃, IS=50A, VGS=0V
Notes:
1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%.
AP60L02S/P
250
150
T C =25 o C
200
T C =150 o C V G =10V ID , Drain Current (A)
V G =10V V G =8.0V
ID , Drain Current (A)
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150
V G =8.0V
100
V G =6.0V
100
V G =6.0V
50
V G =4.0V
50
V G =4.0V
0
0 0 1 2 3 4 5 6 7 8
0
1
2
3.