Document
AP60L02S/P
Advanced Power Electronics Corp.
▼ Low Gate Charge ▼ Simple Drive Requirement
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N-CHANNEL ENHANCEMENT MODE POWER MOSFET
D
BVDSS RDS(ON) ID
25V 12mΩ 50A
▼ Fast Switching G S
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP60L02P) is available for low-profile applications. G D G D S
TO-263(S)
TO-220(P)
S Rating 25 ± 20 50 32 180 62.5 0.5 Units V V A A A W W/ ℃ ℃ ℃
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
1
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
-55 to 150 -55 to 150
Thermal Data
Symbol Rthj-case Rthj-amb Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 2.0 62 Unit ℃/W ℃/W
Data & specifications subject to change without notice
200218032
AP60L02S/P
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=0V, ID=250uA
Min. 25 1 -
Typ. 0.037
Max. Units 12 26 3 1 25 ±100 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
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Static Drain-Source On-Resistance
VGS=10V, ID=25A VGS=4.5V, ID=20A
30 21 2.8 16 8 75 22 20 605 415 195
VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C)
o o
VDS=VGS, ID=250uA VDS=10V, ID=25A VDS=25V, VGS=0V VDS=20V, VGS=0V VGS= ± 20V ID=25A VDS=20V VGS=5V VDS=15V ID=20A RG=3.3Ω,VGS=10V RD=0.75Ω VGS=0V VDS=25V f=1.0MHz
Gate-Source Leakage Total Gate Charge
2
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
2
Source-Drain Diode
Symbol IS ISM VSD Parameter
Continuous Source Current ( Body Diode )
Test Conditions VD=VG=0V , VS=1.26V
1
Min. -
Typ. -
Max. Units 50 180 1.26 A A V
Pulsed Source Current ( Body Diode )
Forward On Voltage
2
Tj=25℃, IS=50A, VGS=0V
Notes:
1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%.
AP60L02S/P
250
150
T C =25 o C
200
T C =150 o C V G =10V ID , Drain Current (A)
V G =10V V G =8.0V
ID , Drain Current (A)
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150
V G =8.0V
100
V G =6.0V
100
V G =6.0V
50
V G =4.0V
50
V G =4.0V
0
0 0 1 2 3 4 5 6 7 8
0
1
2
3
4
5
6
7
8
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
26
1.8
24
I D =25A T c =25 ℃
I D =25A
1.6
V G =10V
22
20
18
Normalized R DS(ON)
2 3 4 5 6 7 8 9 10 11
1.4
RDS(ON) (mΩ )
1.2
16
14
1
12
0.8
10
8
0.6 -50 0 50 100 150
V GS (V)
T j , Junction Temperature ( o C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance v.s. Junction Temperature
AP60L02S/P
60
70
50
60
50
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40
ID , Drain Current (A)
40
30
PD (W)
25 50 75 100 125 150
30
20
20
10
10
0
0 0 50 100 150
T c , Case Temperature ( o C)
T c ,Case Temperature ( o C)
Fig 5. Maximum Drain Current v.s.
Fig 6. Typical Power Dissipation
Case Temperature
1000
1
DUTY=0.5
Normalized Thermal Response (R thjc)
100
10us
0.2
0.1 0.05
ID (A)
100us
0.1
0.02
PDM
10
1ms 10ms 100ms
0.01 SINGLE PULSE
t T
T c =25 o C Single Pulse
1 1 10
Duty factor = t/T Peak Tj = P DM x Rthjc + TC
0.01
V DS (V)
100
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
AP60L02S/P
f=1.0MHz
16
10000
14
I D =25A V DS =12V V DS =16V V DS =20V C (pF)
VGS , Gate to Source Voltage (V)
12
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10
8
1000
6
Ciss Coss
4
Crss
2
0 0 10 20 30 40 50
100 1 6 11 16 21
Q G , Total Gate Charge (nC)
V DS (V)
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
100
3
10
T j =150 o C T j =25 o C VGS(th) (V)
2
IS(A)
1
1
0
0.1 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5
-50
0
50
100
150
V SD (V)
T j , Junction Temperature( C)
o
Fig 11. Forward Characteristic of
Reverse Diode
Fig 12. Gate Threshold Voltage v.s. Junction Temperature
AP60L02S/P
VDS
RD
90%
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D VDS TO THE OSCILLOSCOPE 0.6x RATED VDS
RG
G
+ 10 V -
S VGS
10% VGS td(on) tr td(off) tf
Fig 13. Switching Time Circuit
Fig 14. Swit.