DatasheetsPDF.com

AP60L02S Dataheets PDF



Part Number AP60L02S
Manufacturers Advanced Power Electronics
Logo Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet AP60L02S DatasheetAP60L02S Datasheet (PDF)

AP60L02S/P Advanced Power Electronics Corp. ▼ Low Gate Charge ▼ Simple Drive Requirement www.DataSheet4U.com N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 25V 12mΩ 50A ▼ Fast Switching G S Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is universally preferred for all commercialindustrial surface mount applications and suit.

  AP60L02S   AP60L02S


Document
AP60L02S/P Advanced Power Electronics Corp. ▼ Low Gate Charge ▼ Simple Drive Requirement www.DataSheet4U.com N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 25V 12mΩ 50A ▼ Fast Switching G S Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP60L02P) is available for low-profile applications. G D G D S TO-263(S) TO-220(P) S Rating 25 ± 20 50 32 180 62.5 0.5 Units V V A A A W W/ ℃ ℃ ℃ Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range -55 to 150 -55 to 150 Thermal Data Symbol Rthj-case Rthj-amb Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 2.0 62 Unit ℃/W ℃/W Data & specifications subject to change without notice 200218032 AP60L02S/P Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 25 1 - Typ. 0.037 Max. Units 12 26 3 1 25 ±100 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA RDS(ON) www.DataSheet4U.com Static Drain-Source On-Resistance VGS=10V, ID=25A VGS=4.5V, ID=20A 30 21 2.8 16 8 75 22 20 605 415 195 VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C) o o VDS=VGS, ID=250uA VDS=10V, ID=25A VDS=25V, VGS=0V VDS=20V, VGS=0V VGS= ± 20V ID=25A VDS=20V VGS=5V VDS=15V ID=20A RG=3.3Ω,VGS=10V RD=0.75Ω VGS=0V VDS=25V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol IS ISM VSD Parameter Continuous Source Current ( Body Diode ) Test Conditions VD=VG=0V , VS=1.26V 1 Min. - Typ. - Max. Units 50 180 1.26 A A V Pulsed Source Current ( Body Diode ) Forward On Voltage 2 Tj=25℃, IS=50A, VGS=0V Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. AP60L02S/P 250 150 T C =25 o C 200 T C =150 o C V G =10V ID , Drain Current (A) V G =10V V G =8.0V ID , Drain Current (A) www.DataSheet4U.com 150 V G =8.0V 100 V G =6.0V 100 V G =6.0V 50 V G =4.0V 50 V G =4.0V 0 0 0 1 2 3 4 5 6 7 8 0 1 2 3 4 5 6 7 8 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 26 1.8 24 I D =25A T c =25 ℃ I D =25A 1.6 V G =10V 22 20 18 Normalized R DS(ON) 2 3 4 5 6 7 8 9 10 11 1.4 RDS(ON) (mΩ ) 1.2 16 14 1 12 0.8 10 8 0.6 -50 0 50 100 150 V GS (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature AP60L02S/P 60 70 50 60 50 www.DataSheet4U.com 40 ID , Drain Current (A) 40 30 PD (W) 25 50 75 100 125 150 30 20 20 10 10 0 0 0 50 100 150 T c , Case Temperature ( o C) T c ,Case Temperature ( o C) Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation Case Temperature 1000 1 DUTY=0.5 Normalized Thermal Response (R thjc) 100 10us 0.2 0.1 0.05 ID (A) 100us 0.1 0.02 PDM 10 1ms 10ms 100ms 0.01 SINGLE PULSE t T T c =25 o C Single Pulse 1 1 10 Duty factor = t/T Peak Tj = P DM x Rthjc + TC 0.01 V DS (V) 100 0.00001 0.0001 0.001 0.01 0.1 1 t , Pulse Width (s) Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance AP60L02S/P f=1.0MHz 16 10000 14 I D =25A V DS =12V V DS =16V V DS =20V C (pF) VGS , Gate to Source Voltage (V) 12 www.DataSheet4U.com 10 8 1000 6 Ciss Coss 4 Crss 2 0 0 10 20 30 40 50 100 1 6 11 16 21 Q G , Total Gate Charge (nC) V DS (V) Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics 100 3 10 T j =150 o C T j =25 o C VGS(th) (V) 2 IS(A) 1 1 0 0.1 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 -50 0 50 100 150 V SD (V) T j , Junction Temperature( C) o Fig 11. Forward Characteristic of Reverse Diode Fig 12. Gate Threshold Voltage v.s. Junction Temperature AP60L02S/P VDS RD 90% www.DataSheet4U.com D VDS TO THE OSCILLOSCOPE 0.6x RATED VDS RG G + 10 V - S VGS 10% VGS td(on) tr td(off) tf Fig 13. Switching Time Circuit Fig 14. Swit.


AP60L02P AP60L02S AP60N03GP


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)