Document
AP60N03GS/P
Pb Free Plating Product
Advanced Power Electronics Corp.
▼ Low On-Resistance ▼ Fast Switching
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N-CHANNEL ENHANCEMENT MODE POWER MOSFET D
BVDSS RDS(ON) ID
30V 13.5mΩ 55A
▼ Simple Drive Requirement
G S
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP60N03GP) is available for low-profile applications. GD S
TO-263(S)
G D
TO-220(P)
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current
1
Rating 30 ±20 55 35 215 62.5 0.5 -55 to 150 -55 to 150
Units V V A A A W W/ ℃ ℃ ℃
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 2.0 62 Units ℃/W ℃/W
Data & specifications subject to change without notice
201221041
AP60N03GS/P
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
o
Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=0V, ID=250uA
Min. 30 1 -
Typ. 0.037 11.5 18 30 22.4 2.7 14 7.4 81 24 18 950 440 145
Max. Units 13.5 20 3 1 25 ±100 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF
Breakdown Voltage Temperature Coefficient Reference to 25 ℃, ID=1mA
RDS(ON)
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Static Drain-Source On-Resistance
VGS=10V, ID=28A VGS=4.5V, ID=22A
VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C)
o o
VDS=VGS, ID=250uA VDS=10V, ID=28A VDS=30V, VGS=0V VDS=24V, VGS=0V VGS=±20V ID=28A VDS=24V VGS=5V VDS=15V ID=28A RG=3.3Ω,VGS=10V RD=0.53Ω VGS=0V VDS=25V f=1.0MHz
Gate-Source Forward Leakage Total Gate Charge
2
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
2
Source-Drain Diode
Symbol IS ISM VSD Parameter
Continuous Source Current ( Body Diode )
Test Conditions VD=VG=0V , VS=1.3V
1
Min. -
Typ. -
Max. Units 55 215 1.3 A A V
Pulsed Source Current ( Body Diode )
Forward On Voltage
2
Tj=25℃, IS=55A, VGS=0V
Notes:
1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%.
AP60N03GS/P
200 150
T C =25 C ID , Drain Current (A)
150
o
10V 8.0V ID , Drain Current (A)
100
T C =150 o C
10V 8.0V
6.0V
100
6.0V
50
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50
V G =4.0V
V G =4.0V
0
0
0
2
4
6
8
0
2
4
6
8
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
20
1.6
18
I D = 28 A T C =25 o C Normalized R DS(ON)
1.4
I D =28A V G =10V
RDS(ON) (mΩ )
16
1.2
14
1
12
0.8
10
2 4 6 8 10
0.6 -50 0 50 100 150
V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
100
3
10 2
1
VGS(th) (V)
1 0 -50
T j =150 C IS (A)
o
T j =25 C
o
0.1
0.01 0 0.2 0.4 0.6 0.8 1 1.2
0
50
100
150
V SD , Source-to-Drain Voltage (V)
T j , Junction Temperature ( o C)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s. Junction Temperature
AP60N03GS/P
14
f=1.0MHz
10000
I D = 28 A
12
VGS , Gate to Source Voltage (V)
10
8
V DS =16V V DS =20V V DS =24V
C (pF)
1000
C iss C oss
6
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4
2
C rss
0 0 5 10 15 20 25 30 35 40 100
1 5 9 13 17 21 25 29
Q G , Total Gate Charge (nC)
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
Normalized Thermal Response (Rthjc)
Duty factor=0.5
100
0.2
10us ID (A) 100us 1ms T c =25 C Single Pulse
o
0.1
0.1
0.05
0.02
10
PDM
0.01
t
Single Pulse
10ms 100ms
T
Duty factor = t/T Peak Tj = PDM x Rthjc + TC
1 1 10 100
0.01
0.00001 0.0001 0.001 0.01 0.1 1
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VDS 90%
VG QG 5V QGS QGD
10% VGS td(on) tr td(off) tf Charge Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
.