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G15N60 Dataheets PDF



Part Number G15N60
Manufacturers Infineon
Logo Infineon
Description Fast IGBT
Datasheet G15N60 DatasheetG15N60 Datasheet (PDF)

SGP15N60 SGW15N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: www.DataSheet4U.com- very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability 1 C G E PG-TO-220-3-1 PG-TO-247-3-21 • Qualified according to JEDEC for target applications • Pb-f.

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SGP15N60 SGW15N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: www.DataSheet4U.com- very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability 1 C G E PG-TO-220-3-1 PG-TO-247-3-21 • Qualified according to JEDEC for target applications • Pb-free lead plating; RoHS compliant • Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type SGP15N60 SGW15N60 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 600V, Tj ≤ 150°C Gate-emitter voltage Avalanche energy, single pulse IC = 15 A, VCC = 50 V, RGE = 25 Ω , start at Tj = 25°C Short circuit withstand time Power dissipation TC = 25°C Operating junction and storage temperature Soldering temperature, wavesoldering, 1.6mm (0.063 in.) from case for 10s Tj , Tstg Ts -55...+150 260 °C 2 VCE 600V 600V IC 15A 15A VCE(sat) 2.3V 2.3V Tj 150°C 150°C Marking G15N60 G15N60 Package PG-TO-220-3-1 PG-TO-247-3-21 Symbol VCE IC Value 600 31 15 Unit V A ICpul s VGE EAS 62 62 ±20 85 V mJ tSC Ptot 10 139 µs W VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C 1 2 J-STD-020 and JESD-022 Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Rev. 2.1 June 06 SGP15N60 SGW15N60 Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction – case Thermal resistance, junction – ambient www.DataSheet4U.com Symbol RthJC RthJA Conditions Max. Value 0.9 Unit K/W PG-TO-220-3-1 PG-TO-247-3-21 62 40 Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0V , I C = 5 00 µ A VCE(sat) V G E = 15 V , I C = 15 A T j =2 5 ° C T j =1 5 0 ° C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES I C = 40 0 µ A , V C E = V G E V C E = 60 0 V, V G E = 0 V T j =2 5 ° C T j =1 5 0 ° C Gate-emitter leakage current Transconductance Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current 2) Symbol Conditions Value min. 600 1.7 3 3 Typ. 2 2.3 4 10.9 800 84 52 76 7 13 150 max. 2.4 2.8 5 Unit V µA 40 2000 100 960 101 62 99 A nC nH nA S pF IGES gfs Ciss Coss Crss QGate LE IC(SC) V C E = 0V , V G E =2 0 V V C E = 20 V , I C = 15 A V C E = 25 V , V G E = 0V , f = 1 MH z V C C = 48 0 V, I C =1 5 A V G E = 15 V PG-TO-220-3-1 PG-TO-247-3-21 V G E = 15 V , t S C ≤ 10 µ s V C C ≤ 6 0 0 V, Tj ≤ 150°C 2) Allowed number of short circuits: <1000; time between short circuits: >1s. 2 Rev. 2.1 June 06 SGP15N60 SGW15N60 Switching Characteristic, Inductive Load, at Tj=25 °C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time www.DataSheet4U.com Symbol Conditions Value min. typ. 32 23 234 46 0.30 0.27 0.57 max. 38 28 281 55 0.36 0.35 0.71 Unit td(on) tr td(off) tf Eon Eoff Ets Fall time Turn-on energy Turn-off energy Total switching energy T j =2 5 ° C , V C C = 40 0 V, I C = 1 5 A, V G E = 0/ 15 V , R G = 21 Ω , 1) L σ = 18 0 nH , 1) C σ = 25 0 pF Energy losses include “tail” and diode reverse recovery. ns mJ Switching Characteristic, Inductive Load, at Tj=150 °C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(on) tr td(off) tf Eon Eoff Ets T j =1 5 0 ° C V C C = 40 0 V, I C = 1 5 A, 1) L σ =1 8 0n H, 1) C σ = 2 50 pF V G E = 0/ 15 V , R G = 21 Ω Energy losses include “tail” and diode reverse recovery. 31 23 261 54 0.45 0.41 0.86 38 28 313 65 0.54 0.53 1.07 mJ ns Symbol Conditions Value min. typ. max. Unit 1) Leakage inductance L σ a nd Stray capacity C σ due to dynamic test circuit in Figure E. 3 Rev. 2.1 June 06 SGP15N60 SGW15N60 80A 100A Ic 70A 60A tp=5µs 15µs IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 50A TC=80°C 10A 50µs 40A www.DataSheet4U.com 30A 20A 10A 0A 10Hz 200µs 1A 1ms TC=110°C Ic 0.1A 1V 10V 100V DC 1000V 100Hz 1kHz 10kHz 100kHz f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj ≤ 150°C, D = 0.5, VCE = 400V, VGE = 0/+15V, RG = 21Ω) VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25°C, Tj ≤ 150°C) 35A 140W 30A 120W 100W 80W 60W 40W 20W 0W 25°C IC, COLLECTOR CURRENT Ptot, POWER DISSIPATION 25A 20A 15A 10A 5A 0A 25°C 50°C 75°C 100°C 125°C 50°C 75°C 100°C 125°C TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj ≤ 150°C) TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temper.


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