GM8050

GM8050 Description Package Dimensions 1/2 N P N E P I TA X I A L T R A N S I S T O R The GM8050 is designed for general purpose amplifier applications. www.DataSheet4U.com A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 G H I J K L M Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 5 TYP. 0.70 REF. Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current IB Base Current Total Power Dissipation Symbol Tj Tstg VCBO VCEO VEBO IC IB PD Ratings +150 -55 ~ +150 40 25 6 1.5 0.5 1 V V V A A W Unit Characteristics Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) VBE(sat) VBE(on) Hfe1 Hfe2 Hfe3 fT at Ta = 25 Min. 40 25 6 45 120 40 100 Typ. Max. 100 100 0.5 1.2 1 500 MHz Unit V V V nA nA V V V IC=100uA IC=2mA IE=100uA VCB=35V VEB=6V IC=0.8A, IB=80mA IC=0.8A, IB=80mA VCE=1V, IC=10mA VCE=1V, IC=5mA VCE=1V, IC=100mA VCE=1V, IC=800mA VCE=10V, IC=50mA Test Conditions Classification Of hFE Rank hFE C 120-200 D 160 - 300 E 250 - 500 2/2 Characteristics Curve www.DataSheet4U.com Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assum...