JMnic
Product Specification
Silicon NPN Power Transistors
2SC3158
DESCRIPTION ¡¤ With TO-220F package ¡¤ High voltag...
JMnic
Product Specification
Silicon
NPN Power
Transistors
2SC3158
DESCRIPTION ¡¤ With TO-220F package ¡¤ High voltage ¡¤ High switching speed APPLICATIONS ¡¤ For switching
regulator applications www.DataSheet4U.com
PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION
Absolute maximum ratings (Ta=25¡æ )
SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Ta=25¡æ PC Collector dissipation TC=25¡æ Tj Tstg Junction temperature Storage temperature 60 150 -55~150 ¡æ ¡æ CONDITIONS Open emitter Open base Open collector VALUE 500 400 7 7 14 3 1. 5 W UNIT V V V A A A
JMnic
Product Specification
Silicon
NPN Power
Transistors
CHARACTERISTICS
Tj=25¡æ unless otherwise specified PARAMETER CONDITIONS MIN
2SC3158
SYMBOL
TYP.
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=10mA ; IB=0
400
V
(BR)CBO www.DataSheet4U.com
V
Collector-base breakdown voltage
IC=1mA ; IE=0
500
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA ; IC=0
7
V
VCEsat
Collector-emitter saturation voltage
IC=3A; IB=0.6A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=3A; IB=0.6A
1.2
V
ICBO
Collector cut-off current
VCB=400V ;IE=0
10
¦Ì
A
IEBO
Emitter cut-off current
VEB=5V; IC=0
10
¦Ì
A
hFE-1
DC current gain
IC=1A ; VCE=5V
20
80
hFE-2
DC current gain
IC=4A ; VCE=5V
10
2
JMnic
Product Specification
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