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LA5779MP Dataheets PDF



Part Number LA5779MP
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description Monolithic Linear IC Separately-excited Step-down Switching Regulator
Datasheet LA5779MP DatasheetLA5779MP Datasheet (PDF)

Ordering number : ENA0498 Monolithic Linear IC LA5779MP www.DataSheet4U.com Separately-excited Step-down Switching Regulator (Variable Type) Overview The LA5779MP is a Separately-excited step-down switching regulator (variable type). Functions • High efficiency. • Six external parts. • Time-base generator (160kHz) incorporated. • Current limiter incorporated. • Thermal shutdown circuit incorporated. • ON/OFF function. Specifications Parameter Maximum Input voltage Absolute Maximum Rating.

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Ordering number : ENA0498 Monolithic Linear IC LA5779MP www.DataSheet4U.com Separately-excited Step-down Switching Regulator (Variable Type) Overview The LA5779MP is a Separately-excited step-down switching regulator (variable type). Functions • High efficiency. • Six external parts. • Time-base generator (160kHz) incorporated. • Current limiter incorporated. • Thermal shutdown circuit incorporated. • ON/OFF function. Specifications Parameter Maximum Input voltage Absolute Maximum Ratings at Ta = 25°C Symbol VIN max IO max VSW Pd max Topr Tstg Mounted on a substrate.* Conditions Ratings 30 3 -1 3.9 -30 to +125 -40 to +150 Unit V A V W °C °C Maximum Output current SW pin application reverse voltage Allowable power dissipation Operating temperature Storage temperature * Specified substrate : 76.1×114.3×1.6mm3 : Copper foil ratio 60% FR4 Recommended Operating Conditions at Ta = 25°C Parameter Input voltage range Symbol VIN Conditions Ratings 4.5 to 28 Unit V ■ Any and all SANYO Semiconductor products described or contained herein do not have specifications ■ SANYO Semiconductor assumes no responsibility for equipment failures that result from using products that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before using any SANYO Semiconductor products described or contained herein in such applications. at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. N1306 MS PC 20060411-S00008 No.A0498-1/4 LA5779MP Electrical Characteristics at Ta = 25°C, VO = 3.3V Parameter Reference voltage Efficiency Switching frequency Switching frequency when short-circuit protection is active Line regulation Load regulation Output voltage temperature coefficient Ripple attenuation factor Output leak current www.DataSheet4U.com Current limiter operating voltage Operating current Standby current ENA pin LOW voltage range ENA pin HIGH voltage range Thermal shutdown operating temperature Thermal shutdown Hysteresis width * Design target value: No measurement made. ∆TSD Designed target value. * 15 °C RREJ IOleak IS IVIN ISTBY VENAL VENAH TSD Designed target value. * 2.4 165 f = 100 to 120Hz VIN = 15V, SWOUT = -0.4V VIN = 15V VIN = 15V VIN = 15V, ENA = 5V 3.1 5.6 50 100 0.6 VIN 45 50 dB µA A mA µA V V °C ∆VOLINE ∆VOLOAD ∆VO/∆Ta VIN = 8 to 20V, IO = 1.0A VIN = 15V, IO = 0.5 to 1.5A Designed target value. * 40 10 ±0.5 100 30 mV mV mV/°C Symbol VOS η f fshort Conditions VIN = 15V, IO = 1.0A VIN = 15V, IO = 1.0A, Set VO = 5V VIN = 15V, IO = 1.0A VIN = 15V, VOS = 0V 128 15 Ratings min 1.20 typ 1.23 84 160 30 192 45 max 1.26 Unit V % kHz kHz Package Dimensions unit : mm (typ) 3275 4.5 Pd max - Ta 1.2 10.0 4.5 Allowable power dissipation, Pd max - W 1.3 4.0 3.90 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 -30 -20 Specified sbstrate: 76.1×114.3×1.6mm3 Copper foil ratio 60% FR4 (8.8) 9.9 (1.6) 1.7 0.9 0.4 4.5 1 5 SANYO : SMP5 1.5 0.2 2.7 0 20 40 60 80 100 120 140 160 Ambient temperature, Ta - °C MSG06072 Pin Assignment (1) VIN (2) SWOUT (3) GND (4) VOS (5) ENA No.A0498-2/4 LA5779MP Block Diagram VIN 1 Reg. OCP 2 SWOUT OSC Reset Drive Comp. www.DataSheet4U.com THD 4 VOS VREF Amp. 5 ENA 3 GND Application Circuit Example L1 47µH VIN SWOUT LA5779MP C1 470µF /50V D1 SBD C2 390µF VOS ENA GND R2 R1 No.A0498-3/4 LA5779MP Description of Functional Settings Calculation equation to set the output voltage This IC controls the switching output so that the VOS pin voltage becomes 1.23V (typ). The equation to set the output voltage is as follows: R2 VO = 1+ × 1.23V(typ) R1 The VOS pin has the inrush current of 1µA (typ). Therefore, the error becomes larger when R1 and R2 resistance values are large. www.DataSheet4U.com Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or t.


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