Document
Ordering number : ENN7379
2SA2112
PNP Epitaxial Planar Silicon Transistors
2SA2112
High Current Switching Applications
Applications
•
Package Dimensions
unit : mm 2064A
[2SA2112]
2.5 1.45 6.9 1.0
DC-DC converter, relay drivers, lamp drivers, motor drivers, strobes.
w w w . D a t a S h e e t 4 U . c o m
Features
• • • •
1.0
Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching.
4.5
0.6
1.0
0.9
0.5
1
2
3
0.45
1 : Emitter 2 : Collector 3 : Base
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VCEO VEBO IC ICP IB PC Tj Tstg Conditions
2.54
2.54
SANYO : NMP
Ratings --50 --50 --50 --6 --3 --6 --600 1 150 --55 to +150 Unit V V V V A A mA W °C °C
Electrical Characteristics at Ta=25°C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Symbol ICBO IEBO hFE fT Conditions VCB=-40V, IE=0 VEB=-4V, IC=0 VCE=-2V, IC=--100mA VCE=-10V, IC=--500mA Ratings min typ max --1 --1 200 390 560 MHz Unit µA µA
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N2503 TS IM TA-3749 No.7379-1/4
4.0
1.0
2SA2112
Continued from preceding page.
Parameter Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol Cob VCE(sat)1 VCE(sat)2 VBE(sat) V(BR)CBO V(BR)CES V(BR)CEO V(BR)EBO ton tstg tf Conditions VCB=--10V, f=1MHz IC=--1A, IB=--50mA IC=--2A, IB=--100mA IC=--2A, IB=--100mA IC=--10µA, IE=0 IC=--100µA, RBE=0 IC=--1mA, RBE=∞ IE=--10µA, IC=0 See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. --50 --50 --50 --6 30 230 18 min Ratings typ 24 --135 --260 --0.88 --270 --700 --1.2 max Unit pF mV mV V V V V V ns ns ns
www.DataSheet4U.com
Switching Time Test Circuit
PW=20µs D.C.≤1% INPUT IB2 OUTPUT IB1 VR 50Ω + 100µF VBE=5V + 470µF VCC= --25V RB RL
IC= --10IB1=10IB2= --1A
0 --4
Collector Current, IC -- A
--1.6
mA
--30
mA
--14mA
--2.0
IC -- VCE
m --20 A
--2.0
IC -- VCE
--1 0 mA
--8m
A
--6mA --5mA
Collector Current, IC -- A
--1.6
---1.2
8mA
--
10mA
2 --1
--1.2
mA
--4mA --3mA --2mA
--6mA
--4mA
--0.8
--0.8
--2mA
--0.4
--0.4
--1mA
0 0 --0.2 --0.4 --0.6 --0.8
IB=0
--1.0 IT05441
0 0 --4 --8 --12 --16
IB=0
--20 IT05442
Collector-to-Emitter Voltage, VCE -- V
--3.0
IC -- VBE
Collector-to-Emitter Voltage, VCE -- V
1000 7
hFE -- IC
VCE= --2V
VCE= --2V
Ta=75°C 25°C
--25°C
--2.5
5
Collector Current, IC -- A
--2.0
DC Current Gain, hFE
3 2
--1.5
Ta=7 5°C 25°C --25°C
--1.0
100 7
--0.5
5
0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 IT05443
3 --0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
2
3
5
Base-to-Emitter Voltage, VBE -- V
Collector Current, IC -- A
IT05444
No.7379-2/4
2SA2112
--1.0 7
VCE(sat) -- IC
IC / IB=20
--10 7 5
VCE(sat) -- IC
IC / IB=50
Collector-to-Emitter Saturation Voltage, VCE(sat) -- V
Collector-to-Emitter Saturation Voltage, VCE(sat) -- V
5 3 2
3 2 --1.0 7 5 3 2 --0.1 7 5 3 2
--0.1 7 5 3 2
°C 25 5°C =7 C Ta 5° --2
°C 25 C 75° Ta= °C --25
--0.01 www.DataSheet4U.com --0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
2
3
5
--0.01 --0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
2
3
5
Collector Current, IC -- A
IT05445 100
--10 7
VBE(sat) -- IC
Collector Current, IC -- A
IT05446
Cob -- VCB
IC / IB=50
f=1MHz
Base-to-Emitter Saturation Voltage, VBE(sat) -- V
5
Output Capacitance, Cob -- pF
5 7 --1.0 2 3 5
7
5
3 2
3
--1.0 7 5 3 --0.01
25°C
Ta= --25°C
75°C
2
2
3
5
7 --0.1
2
3
10 --1.0
2
3
5
7
--10
2
3
5
Collector Current, IC -- A
1000 7
IT05447 --10 7 5
fT -- IC
Collector-to-Base Voltage, VCB -- V
7 --100 IT05448
ASO
VCE= --10V
ICP= --6A IC= --3A
Di DC
10ms
1ms
<10µs
Gain-Bandwidth Pr.