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A2112 Dataheets PDF



Part Number A2112
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description 2SA2112
Datasheet A2112 DatasheetA2112 Datasheet (PDF)

Ordering number : ENN7379 2SA2112 PNP Epitaxial Planar Silicon Transistors 2SA2112 High Current Switching Applications Applications • Package Dimensions unit : mm 2064A [2SA2112] 2.5 1.45 6.9 1.0 DC-DC converter, relay drivers, lamp drivers, motor drivers, strobes. w w w . D a t a S h e e t 4 U . c o m Features • • • • 1.0 Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. 4.5 0.6 1.0 0.9 0.5 1 2 3 0.45 1 : Emi.

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Ordering number : ENN7379 2SA2112 PNP Epitaxial Planar Silicon Transistors 2SA2112 High Current Switching Applications Applications • Package Dimensions unit : mm 2064A [2SA2112] 2.5 1.45 6.9 1.0 DC-DC converter, relay drivers, lamp drivers, motor drivers, strobes. w w w . D a t a S h e e t 4 U . c o m Features • • • • 1.0 Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. 4.5 0.6 1.0 0.9 0.5 1 2 3 0.45 1 : Emitter 2 : Collector 3 : Base Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VCEO VEBO IC ICP IB PC Tj Tstg Conditions 2.54 2.54 SANYO : NMP Ratings --50 --50 --50 --6 --3 --6 --600 1 150 --55 to +150 Unit V V V V A A mA W °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Symbol ICBO IEBO hFE fT Conditions VCB=-40V, IE=0 VEB=-4V, IC=0 VCE=-2V, IC=--100mA VCE=-10V, IC=--500mA Ratings min typ max --1 --1 200 390 560 MHz Unit µA µA Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN N2503 TS IM TA-3749 No.7379-1/4 4.0 1.0 2SA2112 Continued from preceding page. Parameter Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol Cob VCE(sat)1 VCE(sat)2 VBE(sat) V(BR)CBO V(BR)CES V(BR)CEO V(BR)EBO ton tstg tf Conditions VCB=--10V, f=1MHz IC=--1A, IB=--50mA IC=--2A, IB=--100mA IC=--2A, IB=--100mA IC=--10µA, IE=0 IC=--100µA, RBE=0 IC=--1mA, RBE=∞ IE=--10µA, IC=0 See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. --50 --50 --50 --6 30 230 18 min Ratings typ 24 --135 --260 --0.88 --270 --700 --1.2 max Unit pF mV mV V V V V V ns ns ns www.DataSheet4U.com Switching Time Test Circuit PW=20µs D.C.≤1% INPUT IB2 OUTPUT IB1 VR 50Ω + 100µF VBE=5V + 470µF VCC= --25V RB RL IC= --10IB1=10IB2= --1A 0 --4 Collector Current, IC -- A --1.6 mA --30 mA --14mA --2.0 IC -- VCE m --20 A --2.0 IC -- VCE --1 0 mA --8m A --6mA --5mA Collector Current, IC -- A --1.6 ---1.2 8mA -- 10mA 2 --1 --1.2 mA --4mA --3mA --2mA --6mA --4mA --0.8 --0.8 --2mA --0.4 --0.4 --1mA 0 0 --0.2 --0.4 --0.6 --0.8 IB=0 --1.0 IT05441 0 0 --4 --8 --12 --16 IB=0 --20 IT05442 Collector-to-Emitter Voltage, VCE -- V --3.0 IC -- VBE Collector-to-Emitter Voltage, VCE -- V 1000 7 hFE -- IC VCE= --2V VCE= --2V Ta=75°C 25°C --25°C --2.5 5 Collector Current, IC -- A --2.0 DC Current Gain, hFE 3 2 --1.5 Ta=7 5°C 25°C --25°C --1.0 100 7 --0.5 5 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 IT05443 3 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 Base-to-Emitter Voltage, VBE -- V Collector Current, IC -- A IT05444 No.7379-2/4 2SA2112 --1.0 7 VCE(sat) -- IC IC / IB=20 --10 7 5 VCE(sat) -- IC IC / IB=50 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 5 3 2 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 --0.1 7 5 3 2 °C 25 5°C =7 C Ta 5° --2 °C 25 C 75° Ta= °C --25 --0.01 www.DataSheet4U.com --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 Collector Current, IC -- A IT05445 100 --10 7 VBE(sat) -- IC Collector Current, IC -- A IT05446 Cob -- VCB IC / IB=50 f=1MHz Base-to-Emitter Saturation Voltage, VBE(sat) -- V 5 Output Capacitance, Cob -- pF 5 7 --1.0 2 3 5 7 5 3 2 3 --1.0 7 5 3 --0.01 25°C Ta= --25°C 75°C 2 2 3 5 7 --0.1 2 3 10 --1.0 2 3 5 7 --10 2 3 5 Collector Current, IC -- A 1000 7 IT05447 --10 7 5 fT -- IC Collector-to-Base Voltage, VCB -- V 7 --100 IT05448 ASO VCE= --10V ICP= --6A IC= --3A Di DC 10ms 1ms <10µs Gain-Bandwidth Pr.


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