Power Transistors
2SC5905
Silicon NPN triple diffusion mesa type
Horizontal deflection output for TV, CRT monitor
Unit...
Power
Transistors
2SC5905
Silicon
NPN triple diffusion mesa type
Horizontal deflection output for TV, CRT monitor
Unit: mm
■ Features
15.5±0.5 φ 3.2±0.1 5˚
3.0±0.3 5˚
(4.5)
26.5±0.5 (2.0)
(1.2) (10.0)
(23.4) 22.0±0.5
High breakdown voltage: VCBO ≥ 1 700 V
High-speed switching: tf < 200 ns
Wide safe operation area
5˚
(4.0)
5˚
2.0±0.2
5˚
■ Absolute Maximum Ratings TC = 25°C
/ Parameter
Symbol Rating
Unit
18.6±0.5 (2.0)
Solder Dip
1.1±0.1
0.7±0.1
5.45±0.3
Collector-base voltage (Emitter open) VCBO
1 700
V
e e) Collector-emitter voltage (E-B short) VCES
1 700
V
c typ Collector-emitter voltage (Base open) VCEO
600
3.3±0.3
5.5±0.3
V
n d stage. tinued Emitter-base voltage (Collector open) VEBO
7
(2.0)
V
le on Base current
IB
8
A
a elifecyc disc Collector current n u ct ped, Peak collector current *
IC
20
A
ICP
30
A
rodu d ty Collector power dissipation
PC
70
W
te tin urP tinue Ta=25°C
3.5
g fo con Junction temperature
Tj
150
°C
in n llowin d dis Storage temperature
Tstg −55 to +150 °C
s fo lane Note) *: Non-repetitive peak collector current
10.9±0.5
5˚ 12 3
1: Base 2: Collector 3: Emitter EIAJ: SC-94 TOP-3E-A1 Package
Internal Connection
C B
E
Ma iscocontinueindteinncalnucdeetype, p ■ Electrical Characteristics TC = 25°C ± 3°C
/Dis ma Parameter
Symbol
Conditions
D ance type, Collector-base cutoff current (Emitter open)
Maintentenance Emitter-base cutoff current (Collector open) ain Forward current transfe...
