9NQ20T Datasheet | PHF9NQ20T





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Part Number 9NQ20T
Description PHF9NQ20T
Manufacture NXP Semiconductors
Total Page 9 Pages
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Features: Philips Semiconductors Product specific ation N-channel TrenchMOS transisto r PHX9NQ20T , PHF9NQ20T FEATURES • ’Trench’ technology • Low on-stat e resistance • Fast switching • Low thermal resistance SYMBOL d QUICK RE FERENCE DATA VDSS = 200 V ID = 5.2 A g RDS(ON) ≤ 400 mΩ s www.DataSheet4 U.com GENERAL DESCRIPTION N-channel, e nhancement mode field-effect power tran sistor using Trench technology, intende d for use in off-line switched mode pow er supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters , motor control circuits and general pu rpose switching applications. The PHX9N Q20T is supplied in the SOT186A (FPAK) conventional leaded package PINNING PI N 1 2 3 case gate drain source isolated DESCRIPTION SOT186A (FPAK) case SOT1 86 (FPAK) case 1 2 3 1 2 3 LIMITING VALUES Limiting values in accordance wi th the Absolute Maximum System (IEC 134 ) SYMBOL PARAMETER VDSS VDGR VGS ID IDM PD Tj, Tstg Drain-source voltage Drain-gate voltage Gate-source voltage Continuo.

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Philips Semiconductors
N-channel TrenchMOStransistor
Product specification
PHX9NQ20T , PHF9NQ20T
FEATURES
SYMBOL
QUICK REFERENCE DATA
’Trench’ technology
• Low on-state resistance
• Fast switching
• Low thermal resistance
d
g
VDSS = 200 V
ID = 5.2 A
RDS(ON) 400 m
www.DataSheet4U.com
s
GENERAL DESCRIPTION
N-channel, enhancement mode field-effect power transistor using Trench technology, intended for use in off-line
switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits
and general purpose switching applications.
The PHX9NQ20T is supplied in the SOT186A (FPAK) conventional leaded package
PINNING
SOT186A (FPAK)
SOT186 (FPAK)
PIN DESCRIPTION
1 gate
case
case
2 drain
3 source
case isolated
12 3
12 3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VDSS
VDGR
VGS
ID
IDM
PD
Tj, Tstg
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Total power dissipation
Operating junction and
storage temperature
Tj = 25 ˚C to 175˚C
Tj = 25 ˚C to 175˚C; RGS = 20 k
Ths = 25 ˚C; VGS = 10 V
Ths = 100 ˚C; VGS = 10 V
Ths = 25 ˚C
Ths = 25 ˚C
MIN.
-
-
-
-
-
-
-
- 55
MAX.
200
200
± 20
5.2
3.3
21
25
150
UNIT
V
V
V
A
A
A
W
˚C
November 2000
1
Rev 1.100

                    
     






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