DISCRETE SEMICONDUCTORS
DATA SHEET
www.DataSheet4U.com
M3D392
BLF861A UHF power LDMOS transistor
Product specification...
DISCRETE SEMICONDUCTORS
DATA SHEET
www.DataSheet4U.com
M3D392
BLF861A UHF power LDMOS
transistor
Product specification Supersedes data of 2000 Aug 04 2001 Feb 09
Philips Semiconductors
Product specification
UHF power LDMOS
transistor
FEATURES High power gain Easy power control Excellent ruggedness Designed to withstand abrupt load mismatch errors Source on underside eliminates DC isolators; reducing www.DataSheet4U.com common mode inductance Designed for broadband operation (UHF band) Internal input and output matching for high gain and optimum broadband operation.
1 2
BLF861A
PINNING - SOT540A PIN 1 2 3 4 5 drain 1 drain 2 gate 1 gate 2 source connected to flange DESCRIPTION
APPLICATIONS Communication transmitter applications in the UHF frequency range.
3 4
MBK777
5
DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS push-pull
transistor in a SOT540A package with ceramic cap. The common source is connected to the mounting flange. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source 860 MHz test circuit. MODE OF OPERATION CW, class-AB PAL BG (TV); class-AB f (MHz) 860 860 (ch 69) VDS (V) 32 32 PL (W) 150 >150 typ. 170 (peak sync)
Top view
Fig.1 Simplified outline.
Gp (dB) >13.5 typ. 14.5 >14
ηD (%) >50 >40
∆Gp (dB) ≤1 note 1
Note 1. Sync compression: input sync ≥ 33%; output sync 27%. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VDS VGS ID Ptot Tstg Tj PARAMETER drain-source vol...