128K x8 bit Low Power CMOS Static RAM
0.1 First revision
- Seperate read and write at ICC, ICC1
ICC = ICC1 → Read : 15mA, Write : 35mA
- Add 70ns speed bin for commercial product and 85ns speed
bin for industrial.
- Improved operating current
Add typical value.
ICC Read : 15mA → 10mA(Remove write current)
ICC2 : 90mA → 60mA
- Speed bin change
Remove 45ns from commercial part
Remove 55ns and 100ns from industrial part.
November 22, 1995
April 15, 1996
September 5, 1996
November 5, 1997
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products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
1 Revision 2.0