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KM681000C Dataheets PDF



Part Number KM681000C
Manufacturers Samsung semiconductor
Logo Samsung semiconductor
Description 128K x8 bit Low Power CMOS Static RAM
Datasheet KM681000C DatasheetKM681000C Datasheet (PDF)

PRELIMINARY KM681000C Family Document Title 128K x8 bit Low Power CMOS Static RAM CMOS SRAM Revision History Revision No. 0.0 0.1 History Initial draft First revision - Seperate read and write at ICC, ICC1 ICC = ICC1 → Read : 15mA, Write : 35mA Finalized - Add 70ns speed bin for commercial product and 85ns speed bin for industrial. Revised - Improved operating current Add typical value. ICC Read : 15mA → 10mA(Remove write current) ICC2 : 90mA → 60mA - Speed bin change Remove 45ns from commerc.

  KM681000C   KM681000C



Document
PRELIMINARY KM681000C Family Document Title 128K x8 bit Low Power CMOS Static RAM CMOS SRAM Revision History Revision No. 0.0 0.1 History Initial draft First revision - Seperate read and write at ICC, ICC1 ICC = ICC1 → Read : 15mA, Write : 35mA Finalized - Add 70ns speed bin for commercial product and 85ns speed bin for industrial. Revised - Improved operating current Add typical value. ICC Read : 15mA → 10mA(Remove write current) ICC2 : 90mA → 60mA - Speed bin change Remove 45ns from commercial part Remove 55ns and 100ns from industrial part. Draft Date November 22, 1995 April 15, 1996 Remark Design target Preliminary www.DataSheet4U.com 1.0 September 5, 1996 Final 2.0 November 5, 1997 Final The attached data sheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices. 1 Revision 2.0 November 1997 PRELIMINARY KM681000C Family 128K x8 bit Low Power CMOS Static RAM FEATURES • Process Technology: TFT • Organization: 128K x8 • Power Supply Voltage: 4.5~5.5V • Low Data Retention Voltage: 2V(Min) • Three state output and TTL Compatible • Package Type: 32-DIP-600, 32-SOP-525, 32-TSOP1-0820F/R CMOS SRAM GENERAL DESCRIPTION The KM681000C families are fabricated by SAMSUNG′s advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for battery backup operation with low data retention current. PRODUCT FAMILY www.DataSheet4U.com Product Family Power Dissipation Operating Temperature Vcc Range Speed Standby (ISB1, Max) 50µA 10µA 50µA 15µA 60mA 32-SOP 32-TSOP1-F/R Operating (ICC2, Max) PKG Type KM681000CL KM681000CL-L KM681000CLI KM681000CLI-L Commercial(0~70°C) 4.5~5.5V Industrial(-40~85°C) 55/70ns 32-DIP, 32-SOP 32-TSOP1-F/R 70ns PIN DESCRIPTION A11 A9 A8 VCC A13 WE A15 CS2 CS2 A15 VCC WE N.C A13 A16 A14 A8 A12 A9 A7 A6 A11 A5 OE A4 A10 CS1 A4 A5 A6 A7 I/O6 A12 I/O5 A14 A16 I/O4 N.C VCC A15 CS2 WE A13 A8 A9 A11 I/O8 I/O7 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 17 18 19 20 21 22 23 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 FUNCTIONAL BLOCK DIAGRAM OE A10 CS1 I/O8 I/O7 I/O6 I/O5 I/O4 VSS I/O3 I/O2 I/O1 A0 A1 A2 A3 Clk gen. Precharge circuit. N.C A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O1 I/O2 I/O3 VSS 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 A4 A5 A6 A7 A8 A12 A13 A14 A15 A16 VCC VSS Memory array 1024 rows 128×8 columns 32-TSOP Type1 - Forward 25 24 23 22 21 20 19 18 17 Row select 32-DIP 32-SOP 25 24 23 22 21 20 19 18 17 32-TSOP Type1 - Reverse 24 25 26 27 28 29 30 31 32 A3 A2 A1 A0 I/O1 I/O2 I/O3 VSS I/O4 I/O5 I/O6 I/O7 I/O8 CS1 A10 OE CS1 CS2 I/O1 I/O8 Data cont I/O Circuit Column select Data cont A0 A1 A2 A3 A9 A10 A1.


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