KM681000E

KM681000E Family Document Title 128Kx8 bit Low Power CMOS Static RAM CMOS SRAM Revision History Revision No. 0.0 1.0 History Design target Finalize - Improve tWP form 55ns to 50ns for 70ns product. - Remove 55ns speed bin for industrial product. Errata correction Draft Data October 12, 1998 August 30, 1999 Remark Preliminary Final www.DataSheet4U.com 1.01 December 1, 1999 The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserves the right to change the specifications and products. SAMSUNG Electronics will answer to your questions. If you have any questions, please contact the SAMSUNG branch offices. 1 Revision 1.01 December 1999 KM681000E Family 128Kx8 bit Low Power CMOS Static RAM FEATURES Process Technology: TFT Organization: 128Kx8 Power Supply Voltage: 4.5~5.5V Low Data Retention Voltage: 2V(Min) Three state output and TTL Compatible Package Type: 32-DIP-600, 32-SOP-525, 32-TSOP1-0820F CMOS SRAM GENERAL DESCRIPTION The KM681000E families are fabricated by SAMSUNG′s advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current. PRODUCT FAMILY Power Dissipation Product Family www.DataSheet4U.com KM681000EL KM681000EL-L KM681000ELI KM681000ELI-L 1. The parameters are tested with 50pF test load Op...