Document
KM681000E Family
Document Title
128Kx8 bit Low Power CMOS Static RAM
CMOS SRAM
Revision History
Revision No.
0.0 1.0
History
Design target Finalize - Improve tWP form 55ns to 50ns for 70ns product. - Remove 55ns speed bin for industrial product. Errata correction
Draft Data
October 12, 1998 August 30, 1999
Remark
Preliminary Final
www.DataSheet4U.com
1.01
December 1, 1999
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserves the right to change the specifications and products. SAMSUNG Electronics will answer to your questions. If you have any questions, please contact the SAMSUNG branch offices.
1
Revision 1.01 December 1999
KM681000E Family
128Kx8 bit Low Power CMOS Static RAM
FEATURES
• Process Technology: TFT • Organization: 128Kx8 • Power Supply Voltage: 4.5~5.5V • Low Data Retention Voltage: 2V(Min) • Three state output and TTL Compatible • Package Type: 32-DIP-600, 32-SOP-525, 32-TSOP1-0820F
CMOS SRAM
GENERAL DESCRIPTION
The KM681000E families are fabricated by SAMSUNG′s advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current.
PRODUCT FAMILY
Power Dissipation Product Family www.DataSheet4U.com KM681000EL KM681000EL-L KM681000ELI KM681000ELI-L
1. The parameters are tested with 50pF test load
Operating Temperature
Vcc Range
Speed
Standby (ISB1, Max) 50µA 10µA 50µA 15µA
Operating (ICC2, Max)
PKG Type
Commercial(0~70°C) 4.5~5.5V Industrial(-40~85°C)
55 1)/70ns
32-DIP, 32-SOP 32-TSOP1-0820F 50mA 32-SOP -525 32-TSOP1-0820F
70ns
PIN DESCRIPTION
N.C A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O1 I/O2 I/O3 VSS 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 VCC A15 CS2 A11 A9 A8 A13 A8 WE A9 CS2 A15 A11 VCC OE NC A16 A10 A14 A12 CS1 A7 I/O8 A6 A5 I/O7 A4 WE A13 I/O6 I/O5 I/O4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 OE A10 CS1 I/O8 I/O7 I/O6 I/O5 I/O4 VSS I/O3 I/O2 I/O1 A0 A1 A2 A3
FUNCTIONAL BLOCK DIAGRAM
Clk gen. Precharge circuit.
32-DIP 32-SOP
25 24 23 22 21 20 19 18 17
32-TSOP Type1-Forward
Raw Address
Row select
Memory array 1024 rows 128 ×8 columns
I/O1 I/O8
Data cont
I/O Circuit Column select
Name CS 1, CS2 OE WE I/O1~I/O8 A0~A16 Vcc Vss N.C.
Function Chip Select Input Output Enable Input Write Enable Input Data Inputs/Outputs Address Inputs Power Ground No Connection
CS 1 CS 2 WE OE Column Address
Data cont
Control logic
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice. 2
Revision 1.01 December 1999
KM681000E Family
PRODUCT LIST
Commercial Temperature Products(0~70°C) Part Name KM681000ELP-5 KM681000ELP-7 KM681000ELP-5L KM681000ELP-7L KM681000ELG-5 KM681000ELG-7 KM681000ELG-5L KM681000ELG-7L www.DataSheet4U.com KM681000ELT-5L KM681000ELT-7L Function 32-DIP, 55ns, Low Power 32-DIP, 70ns, Low Power 32-DIP, 55ns, Low Low Power 32-DIP, 70ns, Low Low Power 32-SOP, 55ns, Low Power 32-SOP, 70ns, Low Power 32-SOP, 55ns, Low Low Power 32-SOP, 70ns, Low Low Power 32-TSOP F, 55ns, Low Low Power 32-TSOP F, 70ns, Low Low Power
CMOS SRAM
Industrial Temperature Products(-40~85°C) Part Name KM681000ELGI-7 KM681000ELGI-7L KM681000ELTI-7L Function 32-SOP, 70ns, Low Power 32-SOP, 70ns, Low Low Power 32-TSOP F, 70ns, Low Low Power
FUNCTIONAL DESCRIPTION
CS1 H X1) L L L CS2 X
1)
OE X
1)
WE X
1)
I/O High-Z High-Z High-Z Dout Din
Mode Deselected Deselected Output Disabled Read Write
Power Standby Standby Active Active Active
L H H H
X1) H L X
1)
X1) H H L
1. X means don′t care (Must be in high or low states)
ABSOLUTE MAXIMUM RATINGS1)
Item Voltage on any pin relative to Vss Voltage on Vcc supply relative to Vss Power Dissipation Storage temperature Operating Temperature Symbol VIN,VOUT VCC PD TSTG TA Ratings -0.5 to 7.0 -0.5 to 7.0 1.0 -65 to 150 0 to 70 -40 to 85 Unit V V W °C °C °C Remark KM681000EL KM681000ELI
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
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Revision 1.01 December 1999
KM681000E Family
RECOMMENDED DC OPERATING CONDITIONS1)
Item Supply voltage Ground Input high voltage Input low voltage Symbol Vcc Vss VIH VIL Product KM681000E Family All Family KM681000E Family KM681000E Family Min 4.5 0 2.2 -0.5
3)
CMOS SRAM
Typ 5.0 0 Max 5.5 0 Vcc+0.5 0.8
2)
Unit V V V V
Note: 1. Commercial Product: TA=0 to 70°C, and Industrial Product: TA=-40 to 85°C, otherwise specified 2. Overshoot : Vcc+3.0V in case of pulse width≤30ns 3. Undershoot : -3.0V in case of pulse width≤30ns 4. Overshoot and undershoot are sampled, not 100% tested.
CAPACITANCE1) (f=1MHz, TA=25°C) ww.