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KM681000E Dataheets PDF



Part Number KM681000E
Manufacturers Samsung semiconductor
Logo Samsung semiconductor
Description 128Kx8 bit Low Power CMOS Static RAM
Datasheet KM681000E DatasheetKM681000E Datasheet (PDF)

KM681000E Family Document Title 128Kx8 bit Low Power CMOS Static RAM CMOS SRAM Revision History Revision No. 0.0 1.0 History Design target Finalize - Improve tWP form 55ns to 50ns for 70ns product. - Remove 55ns speed bin for industrial product. Errata correction Draft Data October 12, 1998 August 30, 1999 Remark Preliminary Final www.DataSheet4U.com 1.01 December 1, 1999 The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserves the right to cha.

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KM681000E Family Document Title 128Kx8 bit Low Power CMOS Static RAM CMOS SRAM Revision History Revision No. 0.0 1.0 History Design target Finalize - Improve tWP form 55ns to 50ns for 70ns product. - Remove 55ns speed bin for industrial product. Errata correction Draft Data October 12, 1998 August 30, 1999 Remark Preliminary Final www.DataSheet4U.com 1.01 December 1, 1999 The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserves the right to change the specifications and products. SAMSUNG Electronics will answer to your questions. If you have any questions, please contact the SAMSUNG branch offices. 1 Revision 1.01 December 1999 KM681000E Family 128Kx8 bit Low Power CMOS Static RAM FEATURES • Process Technology: TFT • Organization: 128Kx8 • Power Supply Voltage: 4.5~5.5V • Low Data Retention Voltage: 2V(Min) • Three state output and TTL Compatible • Package Type: 32-DIP-600, 32-SOP-525, 32-TSOP1-0820F CMOS SRAM GENERAL DESCRIPTION The KM681000E families are fabricated by SAMSUNG′s advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current. PRODUCT FAMILY Power Dissipation Product Family www.DataSheet4U.com KM681000EL KM681000EL-L KM681000ELI KM681000ELI-L 1. The parameters are tested with 50pF test load Operating Temperature Vcc Range Speed Standby (ISB1, Max) 50µA 10µA 50µA 15µA Operating (ICC2, Max) PKG Type Commercial(0~70°C) 4.5~5.5V Industrial(-40~85°C) 55 1)/70ns 32-DIP, 32-SOP 32-TSOP1-0820F 50mA 32-SOP -525 32-TSOP1-0820F 70ns PIN DESCRIPTION N.C A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O1 I/O2 I/O3 VSS 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 VCC A15 CS2 A11 A9 A8 A13 A8 WE A9 CS2 A15 A11 VCC OE NC A16 A10 A14 A12 CS1 A7 I/O8 A6 A5 I/O7 A4 WE A13 I/O6 I/O5 I/O4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 OE A10 CS1 I/O8 I/O7 I/O6 I/O5 I/O4 VSS I/O3 I/O2 I/O1 A0 A1 A2 A3 FUNCTIONAL BLOCK DIAGRAM Clk gen. Precharge circuit. 32-DIP 32-SOP 25 24 23 22 21 20 19 18 17 32-TSOP Type1-Forward Raw Address Row select Memory array 1024 rows 128 ×8 columns I/O1 I/O8 Data cont I/O Circuit Column select Name CS 1, CS2 OE WE I/O1~I/O8 A0~A16 Vcc Vss N.C. Function Chip Select Input Output Enable Input Write Enable Input Data Inputs/Outputs Address Inputs Power Ground No Connection CS 1 CS 2 WE OE Column Address Data cont Control logic SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice. 2 Revision 1.01 December 1999 KM681000E Family PRODUCT LIST Commercial Temperature Products(0~70°C) Part Name KM681000ELP-5 KM681000ELP-7 KM681000ELP-5L KM681000ELP-7L KM681000ELG-5 KM681000ELG-7 KM681000ELG-5L KM681000ELG-7L www.DataSheet4U.com KM681000ELT-5L KM681000ELT-7L Function 32-DIP, 55ns, Low Power 32-DIP, 70ns, Low Power 32-DIP, 55ns, Low Low Power 32-DIP, 70ns, Low Low Power 32-SOP, 55ns, Low Power 32-SOP, 70ns, Low Power 32-SOP, 55ns, Low Low Power 32-SOP, 70ns, Low Low Power 32-TSOP F, 55ns, Low Low Power 32-TSOP F, 70ns, Low Low Power CMOS SRAM Industrial Temperature Products(-40~85°C) Part Name KM681000ELGI-7 KM681000ELGI-7L KM681000ELTI-7L Function 32-SOP, 70ns, Low Power 32-SOP, 70ns, Low Low Power 32-TSOP F, 70ns, Low Low Power FUNCTIONAL DESCRIPTION CS1 H X1) L L L CS2 X 1) OE X 1) WE X 1) I/O High-Z High-Z High-Z Dout Din Mode Deselected Deselected Output Disabled Read Write Power Standby Standby Active Active Active L H H H X1) H L X 1) X1) H H L 1. X means don′t care (Must be in high or low states) ABSOLUTE MAXIMUM RATINGS1) Item Voltage on any pin relative to Vss Voltage on Vcc supply relative to Vss Power Dissipation Storage temperature Operating Temperature Symbol VIN,VOUT VCC PD TSTG TA Ratings -0.5 to 7.0 -0.5 to 7.0 1.0 -65 to 150 0 to 70 -40 to 85 Unit V V W °C °C °C Remark KM681000EL KM681000ELI 1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 3 Revision 1.01 December 1999 KM681000E Family RECOMMENDED DC OPERATING CONDITIONS1) Item Supply voltage Ground Input high voltage Input low voltage Symbol Vcc Vss VIH VIL Product KM681000E Family All Family KM681000E Family KM681000E Family Min 4.5 0 2.2 -0.5 3) CMOS SRAM Typ 5.0 0 Max 5.5 0 Vcc+0.5 0.8 2) Unit V V V V Note: 1. Commercial Product: TA=0 to 70°C, and Industrial Product: TA=-40 to 85°C, otherwise specified 2. Overshoot : Vcc+3.0V in case of pulse width≤30ns 3. Undershoot : -3.0V in case of pulse width≤30ns 4. Overshoot and undershoot are sampled, not 100% tested. CAPACITANCE1) (f=1MHz, TA=25°C) ww.


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