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KM681002A Dataheets PDF



Part Number KM681002A
Manufacturers Samsung semiconductor
Logo Samsung semiconductor
Description 128Kx8 High Speed Static RAM
Datasheet KM681002A DatasheetKM681002A Datasheet (PDF)

PRELIMINARY KM681002A, KM681002AI Document Title 128Kx8 High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. CMOS SRAM Revision History Rev. No. Rev. 0.0 Rev. 1.0 History Initial release with Preliminary. Release to final Data Sheet. 1.1. Delete Preliminary Update D.C parameters. 2.1. Update D.C parameters Previous spec. Items (12/15/17/20ns part) Icc 200/190/180/170mA Isb 30mA Isb1 10mA Draft Data Apr. 22th, 1995 Feb. 29th, 1996 .

  KM681002A   KM681002A


Document
PRELIMINARY KM681002A, KM681002AI Document Title 128Kx8 High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. CMOS SRAM Revision History Rev. No. Rev. 0.0 Rev. 1.0 History Initial release with Preliminary. Release to final Data Sheet. 1.1. Delete Preliminary Update D.C parameters. 2.1. Update D.C parameters Previous spec. Items (12/15/17/20ns part) Icc 200/190/180/170mA Isb 30mA Isb1 10mA Draft Data Apr. 22th, 1995 Feb. 29th, 1996 Remark Preliminary Final www.DataSheet4U.com Rev. 2.0 Jul. 16th, 1996 Updated spec. (12/15/17/20ns part) 170/165/165/160mA 25mA 8mA Jun. 2nd, 1997 Final Rev. 3.0 Add Industrial Temperature Range parts and 300mil-SOJ PKG. 3.1. Add 32-Pin 300mil-SOJ Package. 3.2. Add Industrial Temperature Range parts with the same parameters as Commercial Temperature Range parts. 3.2.1. Add KM68002AI parts for Industrial Temperature Range. 3.2.2. Add ordering information. 3.2.3. Add the condition for operating at Industrial Temp. Range. 3.3. Add the test condition for Voh1 with Vcc=5V±5% at 25°C 3.4. Add timing diagram to define tWP as ″(Timing Wave Form of Write Cycle(CS=Controlled)″ 4.1. Delete 17ns Part Final Rev. 4.0 Feb. 25th, 1998 Final The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquarters. -1- Rev 4.0 Ferruary 1998 PRELIMINARY KM681002A, KM681002AI 128K x 8 Bit High-Speed CMOS Static RAM FEATURES • Fast Access Time 12, 15, 20ns(Max.) • Low Power Dissipation Standby (TTL) : 25mA(Max.) (CMOS) : 8mA(Max.) Operating KM681002A - 12 : 170mA(Max.) KM681002A - 15 : 165mA(Max.) KM681002A - 20 : 160mA(Max.) • Single 5.0V±10% Power Supply • TTL Compatible Inputs and Outputs • I/O Compatible with 3.3V Device • Fully Static Operation - No Clock or Refresh required www.DataSheet4U.com • Three State Outputs • Center Power/Ground Pin Configuration • Standard Pin Configuration KM681002AJ : 32-SOJ-400 KM681002AT: 32-TSOP2-400F CMOS SRAM GENERAL DESCRIPTION The KM681002A is a 1,048,576-bit high-speed Static Random Access Memory organized as 131,072 words by 8 bits. The KM681002A uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated using Samsung′s advanced CMOS process and designed for high-speed circuit technology. It is particularly well suited for use in high-density high-speed system applications. The KM681002A is packaged in a 400mil 32-pin plastic SOJ or TSOP2 forward. ORDERING INFORMATION KM681002A -12/15/20 KM681002AI -12/15/20 Commercial Temp. Industrial Temp. PIN CONFIGURATION(Top View) A0 1 2 3 4 5 6 7 8 9 32 A16 31 A15 30 A14 29 A13 28 OE FUNCTIONAL BLOCK DIAGRAM A1 A2 A3 CS Clk Gen. A0 A1 A2 A3 A4 A5 A6 A7 A8 Pre-Charge Circuit I/O1 I/O2 Vcc 27 I/O8 26 I/O7 SOJ/ TSOP2 25 Vss 24 Vcc 23 I/O6 22 I/O5 21 A12 20 A11 19 A10 18 17 A9 A8 Row Select Vss Memory Array 512 Rows 256x8 Columns I/O3 10 I/O4 11 WE A4 A5 A6 12 13 14 15 16 I/O1 ~I/O8 Data Cont. CLK Gen. I/O Circuit Column Select A7 PIN FUNCTION A9 A10 A11 A12 A13 A14 A15 A16 Pin Name A0 - A16 Pin Function Address Inputs Write Enable Chip Select Output Enable Data Inputs/Outputs Power(+5.0V) Ground CS WE OE WE CS OE I/O1 ~ I/O8 VCC VSS -2- Rev 4.0 Ferruary 1998 PRELIMINARY KM681002A, KM681002AI ABSOLUTE MAXIMUM RATINGS* Parameter Voltage on Any Pin Relative to VSS Voltage on VCC Supply Relative to VSS Power Dissipation Storage Temperature Operating Temperature Commercial Industrial Symbol VIN, VOUT VCC PD TSTG TA TA Rating -0.5 to 7.0 -0.5 to 7.0 1.0 -65 to 150 0 to 70 -40 to 85 Unit V V CMOS SRAM W °C °C °C * Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. www.DataSheet4U.com RECOMMENDED DC OPERATING CONDITIONS(TA=0 to 70°C) Parameter Supply Voltage Ground Input High Voltage Input Low Voltage Symbol VCC VSS VIH VIL Min 4.5 0 2.2 -0.5* Typ 5.0 0 Max 5.5 0 VCC + 0.5** 0.8 Unit V V V V NOTE: The above parameters are also guaranteed at industrial temperature range. * VIL(Min) = -2.0V a.c(Pulse Width≤10ns) for I≤20mA ** VIH(Max) = VCC + 2.0V a.c (Pulse Width≤10ns) for I≤20mA DC AND OPERATING CHARACTERISTICS(TA=0 to 70°C, Vcc=5.0V±10%, unless otherwise specified) Parameter Input Leakage Current Output Leakage Current Operating Current Symbol ILI ILO ICC Test Conditions VIN=VSS to VCC CS=VIH or.


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