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KM681002CLI Dataheets PDF



Part Number KM681002CLI
Manufacturers Samsung semiconductor
Logo Samsung semiconductor
Description 128Kx8 Bit High-Speed CMOS Static RAM
Datasheet KM681002CLI DatasheetKM681002CLI Datasheet (PDF)

PRELIMINARY KM681002C/CL, KM681002CI/CLI Document Title 128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges. CMOS SRAM Revision History Rev. No. Rev. 0.0 Rev. 1.0 History Initial release with Preliminary. Release to Final Data Sheet. 1.1. Delete Preliminary. 2.2. Added Data Retention Characteristics. Add 10ns part. Draft Data Aug. 5. 1998 Mar. 3. 1999 Remark Preliminary Final www.DataSheet4U.com Rev. 2.0 Mar. 3. 2000 Final The attac.

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PRELIMINARY KM681002C/CL, KM681002CI/CLI Document Title 128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges. CMOS SRAM Revision History Rev. No. Rev. 0.0 Rev. 1.0 History Initial release with Preliminary. Release to Final Data Sheet. 1.1. Delete Preliminary. 2.2. Added Data Retention Characteristics. Add 10ns part. Draft Data Aug. 5. 1998 Mar. 3. 1999 Remark Preliminary Final www.DataSheet4U.com Rev. 2.0 Mar. 3. 2000 Final The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquarters. -1- Revision 2.0 March 2000 PRELIMINARY KM681002C/CL, KM681002CI/CLI FEATURES • Fast Access Time 10,12,15,20ns(Max.) • Low Power Dissipation Standby (TTL) : 30mA(Max.) (CMOS) : 5mA(Max.) 0.5mA(Max.) L-ver. only Operating KM681002C/CL-10 : 80mA(Max.) KM681002C/CL-12 : 75mA(Max.) KM681002C/CL-15 : 73mA(Max.) KM681002C/CL-20 : 70mA(Max.) • Single 5.0V±10% Power Supply • TTL Compatible Inputs and Outputs www.DataSheet4U.com • I/O Compatible with 3.3V Device • Fully Static Operation - No Clock or Refresh required • Three State Outputs • 2V Minimum Data Retention; L-ver. only • Center Power/Ground Pin Configuration • Standard Pin Configuration KM681002C/CLJ : 32-SOJ-400 KM681002C/CLT : 32-TSOP2-400CF CMOS SRAM GENERAL DESCRIPTION The KM681002C is a 1,048,576-bit high-speed Static Random Access Memory organized as 131,072 words by 8 bits. The KM681002C uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated using SAMSUNG′s advanced CMOS process and designed for high-speed circuit technology. It is particularly well suited for use in high-density high-speed system applications. The KM681002C is packaged in a 400mil 32-pin plastic SOJ or TSOP2 forward. 128K x 8 Bit High-Speed CMOS Static RAM(5.0V Operating) ORDERING INFORMATION KM681002C/CL-10/12/15/20 KM681002CI/CLI-10/12/15/20 Commercial Temp. Industrial Temp. PIN CONFIGURATION(Top View) A0 1 2 3 4 5 6 7 8 9 32 A16 31 A15 30 A14 29 A13 28 OE 27 I/O8 26 I/O7 FUNCTIONAL BLOCK DIAGRAM A1 A2 A3 Clk Gen. A0 A1 A2 A3 A4 A5 A6 A7 A8 Pre-Charge Circuit CS I/O1 I/O2 Vcc SOJ/ TSOP2 25 Vss 24 Vcc 23 I/O6 22 I/O5 21 A12 20 A11 19 A10 18 17 A9 A8 Row Select Vss Memory Array 512 Rows 256x8 Columns I/O3 10 I/O4 11 WE A4 A5 12 13 14 15 16 I/O1~I/O8 Data Cont. CLK Gen. I/O Circuit Column Select A6 A7 PIN FUNCTION A9 A10 A11 A12 A13 A14 A15 A16 Pin Name A0 - A16 Pin Function Address Inputs Write Enable Chip Select Output Enable Data Inputs/Outputs Power(+5.0V) Ground No Connection CS WE OE WE CS OE I/O1 ~ I/O8 VCC VSS N.C -2- Revision 2.0 March 2000 PRELIMINARY KM681002C/CL, KM681002CI/CLI ABSOLUTE MAXIMUM RATINGS* Parameter Voltage on Any Pin Relative to VSS Voltage on VCC Supply Relative to VSS Power Dissipation Storage Temperature Operating Temperature Commercial Industrial Symbol VIN, VOUT VCC Pd TSTG TA TA Rating -0.5 to Vcc+0.5V -0.5 to 7.0 1 -65 to 150 0 to 70 -40 to 85 Unit V V W °C °C °C CMOS SRAM * Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. www.DataSheet4U.com RECOMMENDED DC OPERATING CONDITIONS*(TA=0 to 70°C) Parameter Supply Voltage Ground Input High Voltage Input Low Voltage Symbol VCC VSS VIH VIL Min 4.5 0 2.2 -0.5** Typ 5.0 0 Max 5.5 0 VCC + 0.5*** 0.8 Unit V V V V * The above parameters are also guaranteed at industrial temperature range. ** VIL(Min) = -2.0V a.c(Pulse Width ≤ 8ns) for I ≤ 20mA. *** VIH(Max) = VCC + 2.0V a.c (Pulse Width ≤ 8ns) for I ≤ 20mA. DC AND OPERATING CHARACTERISTICS*(TA=0 to 70°C, Vcc=5.0V±10%, unless otherwise specified) Parameter Input Leakage Current Output Leakage Current Operating Current Symbol ILI ILO ICC Test Conditions VIN = VSS to VCC CS=VIH or OE=VIH or WE=VIL VOUT=VSS to VCC Min. Cycle, 100% Duty CS=VIL, VIN=VIH or VIL, IOUT=0mA 10ns 12ns 15ns 20ns Standby Current ISB ISB1 Min. Cycle, CS=VIH f=0MHz, CS ≥VCC-0.2V, VIN≥VCC-0.2V or VIN≤0.2V IOL=8mA IOH=-4mA IOH1=-0.1mA Normal L-ver. Min -2 -2 2.4 Max 2 2 80 75 73 70 30 5 0.5 0.4 3.95 V V V mA mA Unit µA µA mA Output Low Voltage Level Output High Voltage Level VOL VOH VOH1** * The above parameters are also guaranteed at industrial temperature range. ** VCC=5.0V±5%, Temp.=25°C. CAPACITANCE*(TA=25°C, f=1.0MHz) Item Input/Output Capacitance Input Capacitance .


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