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KM684002E Dataheets PDF



Part Number KM684002E
Manufacturers Samsung
Logo Samsung
Description 512Kx8 Bit High Speed Static RAM
Datasheet KM684002E DatasheetKM684002E Datasheet (PDF)

KM684002, KM684002E, KM684002I Document Title PRELIMINARY CMOS SRAM 512Kx8 Bit High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commercial, Extended and Industrial Temperature Range. Revision History Rev No. Rev. 0.0 Rev. 1.0 History Initial release with Preliminary. Release to final Data Sheet. 1.1. Delete Preliminary 2.1. Delete 15ns part 2.2. Add 17ns part. 2.3.Add the test condition for Voh1 with Vcc=5V±5% at 25°C 3.1.Delete Low power product with Data Retention Mod.

  KM684002E   KM684002E


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KM684002, KM684002E, KM684002I Document Title PRELIMINARY CMOS SRAM 512Kx8 Bit High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commercial, Extended and Industrial Temperature Range. Revision History Rev No. Rev. 0.0 Rev. 1.0 History Initial release with Preliminary. Release to final Data Sheet. 1.1. Delete Preliminary 2.1. Delete 15ns part 2.2. Add 17ns part. 2.3.Add the test condition for Voh1 with Vcc=5V±5% at 25°C 3.1.Delete Low power product with Data Retention Mode. 3.1.1. Delete Data Retention Characteristics 3.2.Add Industrial and Extended Temperature Range parts with the same parameters as Commercial Temperature Range parts. 3.2.1 Add KM684002I for Industrial Temperature Range. 3.2.2.Add KM684002E for Extended Temperature Range. 3.2.3.Add ordering information. 3.2.4. Add the condition for operating at Industrial and Extended Temperature Range. 3.3.Add timing diagram to define tWP as ″(Timing Wave Form of Write Cycle(CS=Controlled)″ Draft Data Jun. 1th, 1991 Oct. 4th, 1993 Remark Preliminary Final Rev. 2.0 Apr. 2th, 1994 Final Rev. 3.0 Jun. 17th, 1997 Final The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquarters. -1Rev 3.0 June -1997 KM684002, KM684002E, KM684002I 512K x 8 Bit High-Speed CMOS Static RAM FEATURES ¡Ü ¡Ü PRELIMINARY CMOS SRAM GENERAL DESCRIPTION The KM684002 is a 4,194,304-bit high-speed Static Random Access Memory organized as 524,288 words by 8 bits. The KM684002 uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated using Samsung's advanced CMOS process and designed for high-speed circuit technology. It is particularly well suited for use in high-density high-speed system applications. The KM684002 is packaged in a 400 mil 36-pin plastic SOJ. ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü Fast Access Time 17,20,25§À(Max.) Low Power Dissipation Standby (TTL) : 60§Ì(Max.) (CMOS) : 10§Ì(Max.) Operating KM684002 - 17 : 180§Ì(Max.) KM684002 - 20 : 170§Ì(Max.) KM684002 - 25 : 160§Ì(Max.) Single 5.0V±10% Power Supply TTL Compatible Inputs and Outputs I/O Compatible with 3.3V Device Fully Static Operation - No Clock or Refresh required Three State Outputs Center Power/Ground Pin Configuration Standard Pin Configuration KM684002J : 36-SOJ-400 PIN CONFIGURATION(Top View) A0 A1 1 2 3 4 5 6 7 8 9 10 36 N.C 35 A18 34 A17 33 A16 32 A15 31 OE 30 I/O8 ORDERING INFORMATION KM684002 -17/20/25 KM684002E -17/20/25 KM684002I -17/20/25 Commercial Temp. Extended Temp. Industrial Temp. A2 A3 A4 CS I/O1 I/O2 Vcc SOJ 29 I/O7 28 Vss 27 Vcc 26 I/O6 25 I/O5 24 A14 23 A13 22 A12 21 A11 20 A10 19 N.C FUNCTIONAL BLOCK DIAGRAM Clk Gen. A0 A1 A2 A3 A4 A7 A8 A9 A13 A14 I/O1 ~ I/O8 Pre-Charge Circuit Vss I/O3 11 I/O4 12 WE A5 A6 13 14 15 16 17 18 Row Select A7 Memory Array 1024 Rows 512x8 Columns A8 A9 PIN FUNCTION Data Cont. I/O Circuit Column Select Pin Name A0 - A18 CLK Gen. A6 A5 A10 A11 A15 A17 A12 A16 A18 WE CS OE I/O1 ~ I/O8 VCC CS WE OE VSS N.C Pin Function Address Inputs Write Enable Chip Select Output Enable Data Inputs/Outputs Power(+5.0V) Ground No Connection -2- Rev 3.0 June -1997 KM684002, KM684002E, KM684002I ABSOLUTE MAXIMUM RATINGS* Parameter Voltage on Any Pin Relative to VSS Voltage on VCC Supply Relative to VSS Power Dissipation Storage Temperature Commercial Operating Temperature Extended Industrial Symbol VIN, VOUT VCC PD TSTG TA TA TA Rating -0.5 to 7.0 -0.5 to 7.0 1.0 -65 to 150 0 to 70 -25 to 85 -40 to 85 PRELIMINARY CMOS SRAM Unit V V W °C °C °C °C * Stresses greater than those listed under "Absolute Maximum Rating" may cause permanent damage to the device. This is a stress ra ting only and functional operation of the device at these at these or any other conditions above those indicated in the operating sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. RECOMMENDED DC OPERATING CONDITIONS(TA=0 to 70°C) Parameter Supply Voltage Ground Input Low Voltage Input Low Voltage Symbol VCC VSS VIH VIL Min 4.5 0 2.2 -0.5* Typ 5.0 0 Max 5.5 0 VCC+0.5** 0.8 Unit V V V V NOTE: Above parameters are also guaranteed at extended and industrial temperature ranges. * VIL(Min) = -2.0V a.c(Pulse Width ≤10ns) for I ≤20§Ì ** VIH(Max) = V CC + 2.0V a.c (Pulse Width ≤10ns) for I ≤20§Ì DC AND OPERATING CHARACTERISTICS(TA=0 to 70°C, Vcc= 5.0V ±10%, unless otherwise specified) Parameter Input Leakage Current Output Leakage Current Symbol ILI ILO Test Conditions VIN = VSS to VCC CS=VIH or OE=VIH or WE=VIL VOUT = VSS to VCC Min. Cycle, 100% Duty CS=VIL, VIN = VIH or VIL, IOUT=0mA Min. C.


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