32K x 8 Bit High-Speed BiCMOS Static RAM
KM68B261A
32K x 8 Bit High-Speed BiCMOS Static RAM
FEATURES
• Fast Access Time 6,7,8ns(Max.) • Low Power Dissipation Sta...
Description
KM68B261A
32K x 8 Bit High-Speed BiCMOS Static RAM
FEATURES
Fast Access Time 6,7,8ns(Max.) Low Power Dissipation Standby (TTL) : 110 mA(Max.) (CMOS) : 20 mA(Max.) Operating Current : 170 mA(f=100MHz) Single 5V ± 5% Power Supply TTL Compatible Inputs and Outputs www.DataSheet4U.com Fully Static Operation - No Clock or Refresh required Three State Outputs Center Power/Ground Pin Configuration Standard Pin Configuration KM68B261AJ : 32-SOJ-300
BiCMOS SRAM
GENERAL DESCRIPTION
The KM68B261A is a 262,144-bit high-speed Static Random Access Memory organized as 32,768 words by 8 bits. The KM68B261A uses eight common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated using Samsung`s advanced BiCMOS process and designed for high-speed system applications. It is particularly well suited for use in highdensity high-speed system applications. The KM68B261A is packaged in a 300 mil 32-pin plastic SOJ.
FUNCTIONAL BLOCK DIAGRAM
Pre-Charge Circuit
PIN CONFIGURATION(TOP VIEW)
A0 A1 A2 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 N.C A14 A13 A12 /OE I/O8 I/O7 Vss Vcc I/O6 I/O5 A11 A10 A9 A8 N.C
A0 A1 A2 A3 A4 A5 A6 Row Select MEMORY ARRAY 128 Rows 256x8 Columns
A3 /CS I/O1 I/O2 Vcc Vss I/O3 I/O4 /WE A4 Data Cont. I/O Circuit Column Select A5 A6 A7
SOJ
25 24 23 22 21 20 19 18 17
I/O1-I/O8
A7 A8 A9 A10 A11 A12 A13 A14
PIN DESCRIPTION
Pin Name Pin Function Address Inputs...
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