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K4M51163PC-x Dataheets PDF



Part Number K4M51163PC-x
Manufacturers Samsung semiconductor
Logo Samsung semiconductor
Description 8M x 16Bit x 4 Banks Mobile SDRAM
Datasheet K4M51163PC-x DatasheetK4M51163PC-x Datasheet (PDF)

K4M51163PC - R(B)E/G/C/F 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES 1.8V power supply. LVCMOS compatible with multiplexed address. Four banks operation. MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). • EMRS www.DataSheet4U.com cycle with address key programs. • All inputs are sampled at the positive going edge of the system clock. • Burst read single-bit write operation. • Special Functi.

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K4M51163PC - R(B)E/G/C/F 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES 1.8V power supply. LVCMOS compatible with multiplexed address. Four banks operation. MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). • EMRS www.DataSheet4U.com cycle with address key programs. • All inputs are sampled at the positive going edge of the system clock. • Burst read single-bit write operation. • Special Function Support. -. PASR (Partial Array Self Refresh). -. Internal TCSR (Temperature Compensated Self Refresh) -. DS (Driver Strength) -. DPD (Deep Power Down Mode) • DQM for masking. • Auto refresh. • 64ms refresh period (8K cycle). • Commercial Temperature Operation (-25°C ~ 70°C). • Extended Temperature Operation (-25°C ~ 85°C). • 54Balls FBGA (-RXXX : Pb, -BXXX : Pb Free). • • • • Mobile SDRAM GENERAL DESCRIPTION The K4M51163PC is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst lengths and programmable latencies allow the same device to be useful for a variety of high bandwidth and high performance memory system applications. ORDERING INFORMATION Part No. K4M51163PC-R(B)E/G/C/F75 K4M51163PC-R(B)E/G/C/F90 K4M51163PC-R(B)E/G/C/F1L Max Freq. 133MHz(CL=3), 83MHz(CL=2) 111MHz(CL=3), 83MHz(CL=2) 111MHz(CL=3)*1, 66MHz(CL=2) LVCMOS 54 FBGA Pb (Pb Free) Interface Package - R(B)E/G : Normal/Low Power, Extended Temperature(-25°C ~ 85°C) - R(B)C/F : Normal/Low Power, Commercial Temperature(-25°C ~ 70°C) Notes : 1. In case of 40MHz Frequency, CL1 can be supported. Address configuration Organization 32M x 16 Bank BA0, BA1 Row A0 - A12 Column Address A0 - A9 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND. 1. For updates or additional information about Samsung products, contact your nearest Samsung office. 2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar applications where Product failure could result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply. February 2006 K4M51163PC - R(B)E/G/C/F FUNCTIONAL BLOCK DIAGRAM Mobile SDRAM I/O Control LWE Data Input Register Bank Select LDQM www.DataSheet4U.com Address Register LRAS CLK CKE 8M x 16.


R8A77301 K4M51163PC-x DM13C


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