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Z00607 Dataheets PDF



Part Number Z00607
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description Standard 0.8A Triacs
Datasheet Z00607 DatasheetZ00607 Datasheet (PDF)

A2 G A1 A2 A1 G TO-92 Z00607MA A2 G A2 A1 SOT-223 Z00607MN Features • On-state rms current = 0.8 A • Repetitive peak off-state voltage = 600 V • Gate triggering current = 5 mA Z00607 Standard 0.8 A Triacs Datasheet - production data Description The Z00607 is suitable for low power AC switching applications. Typical applications include home appliances (electrovalve, pump, door lock, small lamp control), fan speed controllers,... Thanks to the low gate triggering current these triacs can be .

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A2 G A1 A2 A1 G TO-92 Z00607MA A2 G A2 A1 SOT-223 Z00607MN Features • On-state rms current = 0.8 A • Repetitive peak off-state voltage = 600 V • Gate triggering current = 5 mA Z00607 Standard 0.8 A Triacs Datasheet - production data Description The Z00607 is suitable for low power AC switching applications. Typical applications include home appliances (electrovalve, pump, door lock, small lamp control), fan speed controllers,... Thanks to the low gate triggering current these triacs can be driven directly by microcontrollers. June 2014 This is information on a product in full production. DocID6629 Rev 9 1/8 www.st.com Characteristics 1 Characteristics Z00607 Symbol IT(RMS) ITSM I²t dI/dt IGM PG(AV) Tstg Tj Table 1. Absolute maximum ratings Parameter On-state rms current (full sine wave) SOT-223 TO-92 Non repetitive surge peak on-state current (full cycle, Tj initial = 25 °C) F = 50 Hz F = 60 Hz I²t Value for fusing tp = 10 ms Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns F = 120 Hz Peak gate current tp = 20 µs Average gate power dissipation Storage junction temperature range Operating junction temperature range Ttab = 85 °C TL = 50 °C t = 20 ms t = 16.7 ms Tj = 110 °C Tj = 110 °C Tj = 110 °C Value Unit 0.8 A 9 A 9.5 0.45 A²s 20 A/µs 1 0.1 - 40 to + 150 - 40 to + 110 A W °C Table 2. Electrical characteristics (Tj = 25 °C, unless otherwise specified) Symbol Test Conditions Quadrant Value IGT (1) VGT VGD IH (2) VD = 12 V, RL = 30 Ω VD = VDRM, RL = 3.3 kΩ, Τj = 110 °Χ IT = 200 mA IL IG = 1.2 IGT dV/dt (2) VD = 67% VDRM, gate open Τj = 110 °Χ (dV/dt)c (2) (δς/δτ)χ = 0.35 Α/μσ, Τj = 110 °Χ 1. minimum IGT is guaranteed at 5% of IGT max. 2. for both polarities of A2 referenced to A1. I - II - III IV ALL ALL I - III - IV II MAX MAX MIN MX. MAX MIN MIN 5 7 1.3 0.2 5 10 20 10 1.5 Unit mA V V mA mA V/µs V/µs Table 3. Static characteristics Symbol Test Conditions VTM(1) Vto (1) Rd (1) ITM = 1.1 A tp = 380 µs Threshold voltage Dynamic resistance IDRM IRRM VDRM = VRRM = 600 V 1. for both polarities of A2 referenced to A1. Tj = 25 °C Tj = 110 °C Tj = 110 °C Tj = 25 °C Tj = 110 °C MAX. MAX. MAX. MAX. 2/8 DocID6629 Rev 9 Value 1.5 0.95 420 5 0.1 Unit V V mΩ µA mA Z00607 Characteristics Symbol Rth(j-t) Rth(j-I) Junction to tab (AC) Junction to lead (AC) Rth(j-a) Junction to ambient 1. S = Copper surface under tab. Table 4. Thermal resistances Parameter S(1) = 5 cm² SOT-223 TO-92 SOT-223 TO-92 Value 25 60 60 150 Unit °C/W °C/W Figure 1. Maximum power dissipation versus RMS on-state current (full cycle) P(W) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 IT(RMS)(A) 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Figure 2. Relative variation of gate trigger, holding and latching current versus junction temperature IGT, IH, IL [Tj] / IGT, IH, IL [Tj=25°C] 2.5 2.0 IGT 1.5 IH & IL 1.0 Typical values 0.5 Tj (°C) 0.0 -40 -20 0 20 40 60 80 100 120 Figure 3. Surge peak on-state current versus Figure 4. Non-repetitive surge peak number of cycles on-state current and corresponding value of I2t ITSM (A) 10 9 8 7 6 5 4 Repetitive Tamb = 25°C 3 2 1 0 1 Non repetitive Tj initial = 25°C Number of cycles 10 100 t=20ms One cycle 1000 ITSM (A), I2t (A2s) 200.0 100.0 dI/dt limitation: 20A/µs 10.0 Tj initial = 25°C ITSM 1.0 Sinusoidal pulse with width tp < 10 ms 0.1 0.01 0.10 1.00 I2t tp (ms) 10.00 DocID6629 Rev 9 3/8 8 Characteristics Z00607 Figure 5. On-state characteristics (maximum values) ITM(A) 10.0 Tj = Tjmax. 1.0 Tj = 25°C Tj=max. Vt0=0.95 V Rd=420 mΩ VTM (V) 0.1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Figure 6. Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values) (dI/dt)c [(dV/dt)c] / Specified (dI/dt)c 10.0 8.0 6.0 4.0 2.0 0.0 0.1 (dV/dt)c (V/µs) 1.0 10.0 Figure 7. Relative variation of critical rate of decrease of main current versus junction temperature Figure 8. SOT-223 Thermal resistance junction to ambient versus copper surface under tab (dI/dt)c [Tj] / (dI/dt)c [Tj Specified] 6 5 4 3 2 1 Tj (°C) 0 0 10 20 30 40 50 60 70 80 90 100 110 Rth(j-a)(°C/W) 130 120 110 100 90 80 70 60 50 40 30 20 10 0 0.0 0.5 1.0 1.5 Printed circuit board FR4, copper thickness = 35 µm S(cm²) 2.0 2.5 3.0 3.5 4.0 4.5 5.0 4/8 DocID6629 Rev 9 Z00607 2 Ordering information scheme Ordering information scheme Figure 9. Ordering information scheme Z 006 07 M A Blank 1BA2 Triac series Current 006 = 0.8A Sensitivity 07 = 5mA Voltage M = 600V Package A = TO-92 N = SOT-223 Packing mode 1BA2 = TO-92 Bulk 2BL2 = TO-92 Ammopack 5BL2 = TO-92 Tape and reel 5AA4 = SOT-223 Tape and reel DocID6629 Rev 9 5/8 8 Packaging information 3 Packaging information Z00607 • Epoxy meets UL94, V0 • Lead-free package In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definiti.


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