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FMA219

Filtronic Compound Semiconductors

X-BAND LNA MMIC

FMA219 X-BAND LNA MMIC FEATURES: • • • • • • 7.0 – 11.0 GHz Operating Bandwidth 1.1 dB Noise Figure 21 dB Small-Signal G...


Filtronic Compound Semiconductors

FMA219

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Description
FMA219 X-BAND LNA MMIC FEATURES: 7.0 – 11.0 GHz Operating Bandwidth 1.1 dB Noise Figure 21 dB Small-Signal Gain 12 dBm Output Power +3V Single Bias Supply DC De-coupled Input and Output Ports Datasheet v3.0 LAYOUT: GENERAL www.DataSheet4U.com DESCRIPTION: The FMA219 is a 2-stage, reactively matched pHEMT low-noise MMIC amplifier designed for use over 7.0 to 11.0 GHz. The amplifier requires a single +3V supply and one off-chip component for supply de-coupling. Both the input and output ports are DC de-coupled. Grounding of the amplifier is provided by plated thru-vias to the bottom of the die, no additional ground is required. The amplifier is unconditionally stable over all load states (-45 to +85°C), and conditionally stable if the input port is open-circuited. TYPICAL APPLICATIONS: Low noise front end amplifiers General X-Band gain block ELECTRICAL SPECIFICATIONS: PARAMETER Operating Frequency Bandwidth Small Signal Gain Operating Current Small Signal Gain Flatness Noise Figure SYMBOL BW S21 IOP ∆S21 NF CONDITIONS VDD = +3 V IDD = IOP VDD = +3 V IDD = IOP No RF input VDD = +3 V IDD = IOP VDD = +3 V, IDD = IOP VDD = +3 V, IDD = IOP POUT = +1.5 dBm SCL VDD = +3 V VDD = +3 V IDD = IOP VDD = +3 V IDD = IOP VDD = +3 V IDD = IOP VDD = +3 V IDD = IOP MIN 7 19 50 TYP MAX 11 UNITS GHz dB mA 21 65 ±0.5 1.1 23 80 ±0.8 1.4 dB 3rd Order Intermodulation Distortion Power at 1dB Compression Input Return Loss Input Return Loss @ 9.5GHz + 10GHz Output Return L...




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