N-CHANNEL MOSFET
STP5NC70Z - STP5NC70ZFP STB5NC70Z - STB5NC70Z-1
N-CHANNEL 700V - 1.8Ω - 4.6A TO-220/FP/D²PAK/I²PAK Zener-Protected Power...
Description
STP5NC70Z - STP5NC70ZFP STB5NC70Z - STB5NC70Z-1
N-CHANNEL 700V - 1.8Ω - 4.6A TO-220/FP/D²PAK/I²PAK Zener-Protected PowerMESH™III MOSFET
TYPE STP5NC70Z/FP
www.DataSheet4U.com STB5NC70Z/-1
s s
VDSS 700V 700V
RDS(on) <2Ω <2Ω
ID 4.6 A 4.6 A
1 3
s s s
TYPICAL RDS(on) = 1.8 Ω EXTREMELY HIGH dv/dt AND CAPABILITY GATE TO - SOURCE ZENER DIODES 100% AVALANCHE TESTED VERY LOW GATE INPUT RESISTANCE GATE CHARGE MINIMIZED
D²PAK
1 2
3
TO-220
TO-220FP
12
3
DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-toback Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications. APPLICATIONS SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION s WELDING EQUIPMENT
s
I²PAK (Tabless TO-220) INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM (1) PTOT IGS VESD(G-S) dv/dt VISO Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate-source Current Gate source ESD(HBM-C=100pF, R=15KΩ) Peak Diode Recovery voltage slope Insulation Winthstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature -–65 to 150 150 4.6...
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