IR6311G

Data Sheet 6.124-G IR6311G INTELLIGENT HIGH SIDE MOSFET POWER SWITCH Features www.DataSheet4U.com PWM Current Limit for Short Circuit Protection Over-Temperature Protection Active Output Negative Clamp Reverse Battery Protection for Logic Circuit Broken Ground Protection Short to VCC Protection Low Noise Charge Pump Sleep Mode Supply Current 4kV ESD Protection On All Pins Logic Ground Isolated From Power Ground Vcc(op) Rds(on) Ilim Tj(sd) Eav Applications 5v-50v 150mΩ 5A 170oC 100mJ General Description The IR6311G is a monolithic HIGH SIDE SWITCH with built in short circuit, over- temperature, ESD, inductive load turn off capability and diagnostic feedback. The on-chip protection circuit goes into PWM mode, limiting the average current during short circuit if the drain current exceeds 5A. The protection circuit latches off the high side switch if the junction temperature exceeds 170oC and latches on after the junction temperature falls by 10oC. The Vcc (drain) to OUT (source) voltage is actively clamped at 55V, improving its performance during turn off with inductive loads. The on-chip charge pump high side driver stage is floating and referenced to the source of the power MOSFET. Thus the logic to power ground isolation can be as high as 50V. This allows operation with larger offset as well as controlling the switch during load energy recirculation or regeneration. A diagnostic pin is provided for status feedback of short circuit, over temperature a...