2SC3622

DATA SHEET SILICON TRANSISTORS 2SC3622, 3622A NPN SILICON EPITAXIAL TRANSISTOR FOR LOW–FREQUENCY POWER AMPLIFIERS AND SWITCHING FEATURES www.DataSheet4U.com PACKAGE DRAWING (UNIT: mm) High hFE: hFE = 1000 to 3200 @VCE = 5.0 V, IC = 1.0 mA VCE(sat) = 0.07 V TYP. @IC/IB = 50 mA/5.0 mA Low VCE(sat): High VEBO: VEBO: 12 V (2SC3622) VEBO: 15 V (2SC3622A) ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) PT Tj Tstg 12 150 250 150 −55 to +150 Ratings 2SC3622 2SC3622A 60 50 15 Unit V V V mA mW °C °C ELECTRICAL CHARACTERISTICS (Ta = 25°C) Parameter Collector cutoff current Emitter cutoff current DC current gain DC current gain DC base voltage Collector saturation voltage Base saturation voltage Gain bandwidth product Output capacitance Turn-on time Storage temperature Fall time Symbol ICBO IEBO hFE1 * hFE2 * VBE * VCE(sat) * VBE(sat) * fT Cob ton tstg toff Conditions VCB = 50 V, IE = 0 VEB = 10 V, IC = 0 VCE = 5.0 V, IC = 1.0 mA VCE = 5.0 V, IC = 100 mA VCE = 5.0 V, IC = 1.0 mA IC = 50 mA, IB = 5.0 mA IC = 50 mA, IB = 5.0 mA VCE = 5.0 V, IE = −10 mA VCB = 5 V, IE = 0, f = 1.0 MHz VCC = 10 V, VBE(off) = –2.7 V IC = 50 mA IB1 = −IB2 = 1 mA 1000 200 1800 350 560 0.07 0.8 250 3.0 0.13 0.72 1.22 0.30 1.2 mV V V MHz pF µs MIN. TYP. MAX. 100 100 3200 Unit nA nA − µs µs * Pulse test PW ≤...