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LTR-3208E Dataheets PDF



Part Number LTR-3208E
Manufacturers Lite-On Technology Corporation
Logo Lite-On Technology Corporation
Description Phototransistors
Datasheet LTR-3208E DatasheetLTR-3208E Datasheet (PDF)

IR Emitter and Detector Product Data Sheet LTR-3208E Spec No.: DS-50-92-0068 Effective Date: 05/03/2000 Revision: A LITE-ON DCC RELEASE BNS-OD-FC001/A4 LITE-ON Technology Corp. / Optoelectronics No.90,Chien 1 Road, Chung Ho, New Taipei City 23585, Taiwan, R.O.C. Tel: 886-2-2222-6181 Fax: 886-2-2221-1948 / 886-2-2221-0660 http://www.liteon.com/opto LITE-ON ELECTRONICS, INC. Property of Lite-On Only FEATURES * WIDE RANGE OF COLLECTOR CURRENT * THE LENS IS FOR HIGH SENSITIVITY * LOW COST PLASTIC P.

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IR Emitter and Detector Product Data Sheet LTR-3208E Spec No.: DS-50-92-0068 Effective Date: 05/03/2000 Revision: A LITE-ON DCC RELEASE BNS-OD-FC001/A4 LITE-ON Technology Corp. / Optoelectronics No.90,Chien 1 Road, Chung Ho, New Taipei City 23585, Taiwan, R.O.C. Tel: 886-2-2222-6181 Fax: 886-2-2221-1948 / 886-2-2221-0660 http://www.liteon.com/opto LITE-ON ELECTRONICS, INC. Property of Lite-On Only FEATURES * WIDE RANGE OF COLLECTOR CURRENT * THE LENS IS FOR HIGH SENSITIVITY * LOW COST PLASTIC PACKAGE * THE LTR-3208E IS A SPECIAL DARK PLASTIC PACKAGE THAT CUT THE VISIBLE LIGHT AND SUITABLE FOR THE DETECTORS OF INFRARED APPLICATIONS PACKAGE DIMENSIONS NOTES: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.25mm(.010") unless otherwise noted. 3. Protruded resin under flange is 1.5mm(.059") max. 4. Lead spacing is measured where the leads emerge from the package. 5. Specifications are subject to change without notice. Part No. : LTR-3208E DATA SHEET BNS-OD-C131/A4 Page : 1 of 3 LITE-ON ELECTRONICS, INC. Property of Lite-On Only ABSOLUTE MAXIMUM RATINGS AT TA=25℃ PARAMETER Power Dissipation Collector-Emitter Voltage Emitter-Collector Voltage Operating Temperature Range Storage Temperature Range Lead Soldering Temperature [1.6mm(.063") From Body] MAXIMUM RATING UNIT 100 mW 30 V 5 V -40℃ to + 85℃ -55℃ to + 100℃ 260℃ for 5 Seconds ELECTRICAL / OPTICAL CHARACTERISTICS AT TA=25℃ PARAMETER SYMBOL MIN. TYP. MAX UNIT TEST CONDITION Collector-Emitter Breakdown Voltage V(BR)CEO 30 V IC = 1mA Ee = 0mW/c㎡ Emitter-Collector Breakdown Voltage V(BR)ECO 5 V IE = 100μA Ee = 0mW/c㎡ Collector Emitter Saturation Voltage VCE(SAT) 0.1 0.4 V IC = 100μA Ee = 1mW/c㎡ Rise Time Fall Time Tr 10 μs VCC = 5V IC = 1mA Tf 15 μs RL = 1KΩ Collector Dark Current ICEO 100 nA VCE = 10V Ee = 0mW/c㎡ 0.64 1.68 BIN NO. BIN A On State Collector Current 1.12 IC(ON) 1.44 1.76 2.08 2.16 2.64 mA 3.12 3.60 VCE = 5V Ee = 1mW/c㎡ λ=940nm BIN B BIN C BIN D BIN E 2.40 BIN F Part No. : LTR-3208E DATA SHEET BNS-OD-C131/A4 Page : 2 of 3 LITE-ON ELECTRONICS, INC. Property of Lite-On Only TYPICAL ELECTRICAL / OPTICAL CHARACTERISTICS CURVES (25℃ Ambient Temperature Unless Otherwise Noted) C ollector Pow er D issipation Pc(m W ) Iceo-Collector Dark C urrent-  A Tr Tf-R ise and Fall Tim e-  s 100 10 1 0.1 0.01 0 0 40 80 120 Ta-Am bient Tem perature- o C FIG .1 CO LLECTO R DARK CURRENT VS AM BIENT TEM PERATURE 200 180 160 140 120 100 80 60 40 20 0 0 Vcc=5V VRL=1V F =100Hz PW =1ms 2 4 tf tr 6 8 10 R L-Load R esistance-K  FIG .3 RISE AND FALL TIM E VS LO AD RESISTANCE 120 100 80 60 40 20 0 -40 -20 0 20 40 60 80 100 Ta-Am bient Tem perature- o C FIG .2 CO LLECTO R PO W ER DISSIPATIO N VS AM BIENT TEM PERATURE Relative Collector Current 4.0 Vce= 5V 3.0 2.0 1.0 0 0 1 2 3 4 5 Ee-Irradiance-m W /cm 2 FIG.4 RELATIVE COLLECTOR CURRENT VS IRRADIANCE o o o 0 10 20 o 30 R elative Sensitivity o 1.0 40 o 0.9 50 o 0.8 60 o 70 0.7 o 80 o 90 0.5 0.3 0.1 0.2 0.4 0.6 FIG .5 SENSITIVITY DIAG RAM Part No. : LTR-3208E DATA SHEET BNS-OD-C131/A4 Page : 3 of 3 .


2SC3622A LTR-3208E TPD4105K


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