FHC40LG

FHC40LG Super Low Noise HEMT FEATURES Low Noise Figure: 0.3dB (Typ.)@f=4GHz High Associated Gain: 15.5dB (Typ.)@f=4GHz Lg ≤ 0.15µm, Wg = 280µm Gold Gate Metallization for High Reliability Cost Effective Ceramic Microstrip (SMT) Package Tape and Reel Available DESCRIPTION The FH40LG is a Super High Electron Mobility Transistor TM (SuperHEMT ) intended for general purpose, ultra-low noise and high gain amplifiers in the 2-12GHz frequency range. This device is packaged in a cost effective, low parasitic, hermetically sealed www.DataSheet4U.com metal-ceramic package for high volume telecommunication, DBS, TVRO, VSAT or other low noise applications. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Note: Mounted on Al2O3 board (30 x 30 x 0.65mm) Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 2 volts. 2. The forward and reverse gate currents should not exceed 0.2 and -0.075 mA respectively with gate resistance of 4000Ω. 3. The operating channel temperature (Tch) should not exceed 80°C. Symbol VDS VGS Ptot Tstg Tch Condition Rating 3.5 -3.0 Unit V V mW °C °C Note 290 -65 to +175 175 ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Satur...