Document
GF4410
N-Channel Enhancement-Mode MOSFET
H C N T E TRE NF E G
SO-8
0.197 (5.00) 0.189 (4.80)
VDS 30V RDS(ON) 13.5mΩ ID 10A
®
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8 5 0.157 (3.99) 0.150 (3.81) 0.244 (6.20) 0.228 (5.79) 1 4
Dimensions in inches and (millimeters)
0.019 (0.48) x 45 ° 0.010 (0.25)
0.05 (1.27) 0.04 (1.02) 0.245 (6.22) Min.
0.009 (0.23) 0.007 (0.18)
0.165 (4.19) 0.155 (3.94)
0.050 (1.27)
0.020 (0.51) 0.013 (0.33) 0.069 (1.75) 0.053 (1.35) 0.009 (0.23) 0.004 (0.10)
0.035 (0.889) 0.025 (0.635)
0 °– 8 ° 0.050(1.27) 0.016 (0.41)
0.050 typ. (1.27)
Mounting Pad Layout
Mechanical Data
Case: SO-8 molded plastic body Terminals: Leads solderable per MIL-STD-750, Method 2026 High temperature soldering guaranteed: 250°C/10 seconds at terminals Mounting Position: Any Weight: 0.5g
Features
• Advanced Trench Process Technology • High Density Cell Design for Ultra Low On-Resistance • Specially Designed for Low Voltage DC/DC Converters • Fast Switching for High Efficiency
Maximum Ratings and Thermal Characteristics (T
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TJ = 150°C(1) Pulsed Drain Current Continuous Source Current (Diode Conduction)(1) Maximum Power Dissipation TA = 25°C TA = 70°C
(1)
A
= 25°C unless otherwise noted)
Symbol VDS VGS TA = 25°C TA = 70°C ID IDM IS PD TJ, Tstg RθJA
Limit 30
Unit V
± 20
10 8 50 2.3 2.5 1.6 –55 to 150 50
A
W °C °C/W 7/10/01
Operating Junction and Storage Temperature Range Maximum Junction-to-Ambient Thermal Resistance
Notes: (1) Surface Mounted on FR4 Board, t ≤ 10 sec.
GF4410
N-Channel Enhancement-Mode MOSFET
Electrical Characteristics (T
Parameter Static Gate Threshold Voltage Gate-Body Leakage
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J
= 25°C unless otherwise noted)
Symbol
Test Condition VDS = VGS, ID = 250µA VDS = 0V, VGS = ± 20V VDS = 30V, VGS = 0V VDS=30V, VGS=0V, TJ=55°C VDS ≥ 5V, VGS = 10V VGS = 10V, ID = 10A VGS = 4.5V, ID = 5A
Min
Typ
Max
Unit
VGS(th) IGSS IDSS ID(on) RDS(on) gfs
1.0 – – – 20 – – –
– – – – – 8 12 38
–
V nA µA A mΩ S
± 100
1 25 – 13.5 20 –
Zero Gate Voltage Drain Current On-State Drain Current(1) Drain-Source On-State Resistance(1) Forward Transconductance(1) Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Diode Forward Voltage(1) Source-Drain Reverse Recovery Time
Note: (1) Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%
VDS = 15V, ID = 10A
Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
VDS = 15V, ID = 10A, VGS = 5V VDS = 15V, VGS = 10V ID = 10A VDD = 25V, RL = 25Ω ID ≈ 1A, VGEN = 10V RG = 6Ω VGS = 0V VDS = 25V f = 1.0MHZ
– – – – – – – – – – –
23 42 5 8 9 12 70 35 2100 320 190
32 60 – – 15 20 100 80 – – – pF ns nC
VSD trr
IS = 2.3A, VGS = 0V IF = 2.3A, di/dt = 100A/µs
– –
0.75 55
1.1 80
V ns
VDD ton toff tr
90%
Switching Test Circuit
VGEN RG
VIN
D
RD VOUT
Switching Waveforms
td(on)
td(off)
tf 90 %
10% INVERTED 90%
Output, VOUT
DUT
10%
G
50% 50%
S
Input, VIN
10% PULSE WIDTH
GF4410
N-Channel Enhancement-Mode MOSFET
Ratings and Characteristic Curves (T
50 VGS=10V 6.0 V 40 5.0 V
A
= 25°C unless otherwise noted)
Fig. 1 – Output Characteristics
50 4.5V 4.0V 3.5V 40
Fig. 2 – Transfer Characteristics
VDS = 10V
ID -- Drain Source Current (A)
ID -- Drain Current (A)
30
30 TJ = 125°C --55°C 10 25°C
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20 3.0V
20
10 2.5V 0 0 0.5 1 1.5 2 2.5 3
0 1 2 3 4 5
VDS -- Drain-to-Source Voltage (V)
VGS -- Gate-to-Source Voltage (V)
Fig. 3 – Threshold Voltage vs. Temperature
1.8 ID = 250µA 0.02
Fig. 4 – On-Resistance vs. Drain Current
VGS(th) -- Threshold Voltage (V)
RDS(ON) -- On-Resistance (Ω)
1.6
0.016
1.4 1.2
0.012
VGS = 4.5V
0.008 VGS = 10V 0.004
1
0.8 0.6 --50
0 --25 0 25 50 75 100 125 150 0 10 20 30 40 50
TJ -- Junction Temperature (°C)
ID -- Drain Current (A)
Fig. 5 – On-Resistance vs. Junction Temperature
1.6 VGS = 10V ID = 10A
RDS(ON) -- On-Resistance (Normalized)
1.4
1.2
1
0.8
0.6 --50
--25
0
25
50
75
100
125
150
TJ -- Junction Temperature (°C)
GF4410
N-Channel Enhancement-Mode MOSFET
Ratings and Characteristic Curves (T
A
= 25°C unless otherwise noted)
Fig. 6 – On-Resistance vs. Gate-to-Source Voltage
0.035 ID = 10A 10
Fig. 7 – Gate Charge
VGS -- Gate-to-Source Voltage (V)
VDS = 15V ID = 10A 8
0.03
RDS(ON) -- On-Resistance (Ω)
0.025
www.DataSheet4U.com 0.02
0.015 0.01 25°C 0.005 0 2 4 6 8 10 TJ = 125°C
6
4
2
0 0 10 20 30 40 30 45
VGS -- Gate-to-Source Voltage (V)
Qg -- Gate Charge (nC)
Fig. 8 – Capacitance
3000 f = 1MHz VGS = 0V 100
Fig. 9 – Source-Drain Diode Forward Voltage
VGS = 0V
2500
2000 1500
IS -- Source Current (A)
C -- Capacitance (pF)
Ciss
10
1
TJ = 125°C 25°C
1000 500 0 0 5 Crss 10 15 20 25 Coss
0.1
--55°C
0.01
0
0.2
0.4
0.6
0.8
1
1.2
VDS -- Drain-to-Source Voltage (V)
VSD -- Source-to-Drain Voltage (V)
GF4410
N-Channel Enhancement-Mode.