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GF4410 Dataheets PDF



Part Number GF4410
Manufacturers General Semiconductor
Logo General Semiconductor
Description N-channel Enhancement-mode MOSFET
Datasheet GF4410 DatasheetGF4410 Datasheet (PDF)

GF4410 N-Channel Enhancement-Mode MOSFET H C N T E TRE NF E G SO-8 0.197 (5.00) 0.189 (4.80) VDS 30V RDS(ON) 13.5mΩ ID 10A ® www.DataSheet4U.com 8 5 0.157 (3.99) 0.150 (3.81) 0.244 (6.20) 0.228 (5.79) 1 4 Dimensions in inches and (millimeters) 0.019 (0.48) x 45 ° 0.010 (0.25) 0.05 (1.27) 0.04 (1.02) 0.245 (6.22) Min. 0.009 (0.23) 0.007 (0.18) 0.165 (4.19) 0.155 (3.94) 0.050 (1.27) 0.020 (0.51) 0.013 (0.33) 0.069 (1.75) 0.053 (1.35) 0.009 (0.23) 0.004 (0.10) 0.035 (0.889) 0.025 (0.635) .

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GF4410 N-Channel Enhancement-Mode MOSFET H C N T E TRE NF E G SO-8 0.197 (5.00) 0.189 (4.80) VDS 30V RDS(ON) 13.5mΩ ID 10A ® www.DataSheet4U.com 8 5 0.157 (3.99) 0.150 (3.81) 0.244 (6.20) 0.228 (5.79) 1 4 Dimensions in inches and (millimeters) 0.019 (0.48) x 45 ° 0.010 (0.25) 0.05 (1.27) 0.04 (1.02) 0.245 (6.22) Min. 0.009 (0.23) 0.007 (0.18) 0.165 (4.19) 0.155 (3.94) 0.050 (1.27) 0.020 (0.51) 0.013 (0.33) 0.069 (1.75) 0.053 (1.35) 0.009 (0.23) 0.004 (0.10) 0.035 (0.889) 0.025 (0.635) 0 °– 8 ° 0.050(1.27) 0.016 (0.41) 0.050 typ. (1.27) Mounting Pad Layout Mechanical Data Case: SO-8 molded plastic body Terminals: Leads solderable per MIL-STD-750, Method 2026 High temperature soldering guaranteed: 250°C/10 seconds at terminals Mounting Position: Any Weight: 0.5g Features • Advanced Trench Process Technology • High Density Cell Design for Ultra Low On-Resistance • Specially Designed for Low Voltage DC/DC Converters • Fast Switching for High Efficiency Maximum Ratings and Thermal Characteristics (T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TJ = 150°C(1) Pulsed Drain Current Continuous Source Current (Diode Conduction)(1) Maximum Power Dissipation TA = 25°C TA = 70°C (1) A = 25°C unless otherwise noted) Symbol VDS VGS TA = 25°C TA = 70°C ID IDM IS PD TJ, Tstg RθJA Limit 30 Unit V ± 20 10 8 50 2.3 2.5 1.6 –55 to 150 50 A W °C °C/W 7/10/01 Operating Junction and Storage Temperature Range Maximum Junction-to-Ambient Thermal Resistance Notes: (1) Surface Mounted on FR4 Board, t ≤ 10 sec. GF4410 N-Channel Enhancement-Mode MOSFET Electrical Characteristics (T Parameter Static Gate Threshold Voltage Gate-Body Leakage www.DataSheet4U.com J = 25°C unless otherwise noted) Symbol Test Condition VDS = VGS, ID = 250µA VDS = 0V, VGS = ± 20V VDS = 30V, VGS = 0V VDS=30V, VGS=0V, TJ=55°C VDS ≥ 5V, VGS = 10V VGS = 10V, ID = 10A VGS = 4.5V, ID = 5A Min Typ Max Unit VGS(th) IGSS IDSS ID(on) RDS(on) gfs 1.0 – – – 20 – – – – – – – – 8 12 38 – V nA µA A mΩ S ± 100 1 25 – 13.5 20 – Zero Gate Voltage Drain Current On-State Drain Current(1) Drain-Source On-State Resistance(1) Forward Transconductance(1) Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Diode Forward Voltage(1) Source-Drain Reverse Recovery Time Note: (1) Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2% VDS = 15V, ID = 10A Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss VDS = 15V, ID = 10A, VGS = 5V VDS = 15V, VGS = 10V ID = 10A VDD = 25V, RL = 25Ω ID ≈ 1A, VGEN = 10V RG = 6Ω VGS = 0V VDS = 25V f = 1.0MHZ – – – – – – – – – – – 23 42 5 8 9 12 70 35 2100 320 190 32 60 – – 15 20 100 80 – – – pF ns nC VSD trr IS = 2.3A, VGS = 0V IF = 2.3A, di/dt = 100A/µs – – 0.75 55 1.1 80 V ns VDD ton toff tr 90% Switching Test Circuit VGEN RG VIN D RD VOUT Switching Waveforms td(on) td(off) tf 90 % 10% INVERTED 90% Output, VOUT DUT 10% G 50% 50% S Input, VIN 10% PULSE WIDTH GF4410 N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T 50 VGS=10V 6.0 V 40 5.0 V A = 25°C unless otherwise noted) Fig. 1 – Output Characteristics 50 4.5V 4.0V 3.5V 40 Fig. 2 – Transfer Characteristics VDS = 10V ID -- Drain Source Current (A) ID -- Drain Current (A) 30 30 TJ = 125°C --55°C 10 25°C www.DataSheet4U.com 20 3.0V 20 10 2.5V 0 0 0.5 1 1.5 2 2.5 3 0 1 2 3 4 5 VDS -- Drain-to-Source Voltage (V) VGS -- Gate-to-Source Voltage (V) Fig. 3 – Threshold Voltage vs. Temperature 1.8 ID = 250µA 0.02 Fig. 4 – On-Resistance vs. Drain Current VGS(th) -- Threshold Voltage (V) RDS(ON) -- On-Resistance (Ω) 1.6 0.016 1.4 1.2 0.012 VGS = 4.5V 0.008 VGS = 10V 0.004 1 0.8 0.6 --50 0 --25 0 25 50 75 100 125 150 0 10 20 30 40 50 TJ -- Junction Temperature (°C) ID -- Drain Current (A) Fig. 5 – On-Resistance vs. Junction Temperature 1.6 VGS = 10V ID = 10A RDS(ON) -- On-Resistance (Normalized) 1.4 1.2 1 0.8 0.6 --50 --25 0 25 50 75 100 125 150 TJ -- Junction Temperature (°C) GF4410 N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 6 – On-Resistance vs. Gate-to-Source Voltage 0.035 ID = 10A 10 Fig. 7 – Gate Charge VGS -- Gate-to-Source Voltage (V) VDS = 15V ID = 10A 8 0.03 RDS(ON) -- On-Resistance (Ω) 0.025 www.DataSheet4U.com 0.02 0.015 0.01 25°C 0.005 0 2 4 6 8 10 TJ = 125°C 6 4 2 0 0 10 20 30 40 30 45 VGS -- Gate-to-Source Voltage (V) Qg -- Gate Charge (nC) Fig. 8 – Capacitance 3000 f = 1MHz VGS = 0V 100 Fig. 9 – Source-Drain Diode Forward Voltage VGS = 0V 2500 2000 1500 IS -- Source Current (A) C -- Capacitance (pF) Ciss 10 1 TJ = 125°C 25°C 1000 500 0 0 5 Crss 10 15 20 25 Coss 0.1 --55°C 0.01 0 0.2 0.4 0.6 0.8 1 1.2 VDS -- Drain-to-Source Voltage (V) VSD -- Source-to-Drain Voltage (V) GF4410 N-Channel Enhancement-Mode.


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